Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits

M. Sadeghi; M. Missous

Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits

Department of Electrical & Electronic Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

GaAs-InGaAs-AlGaAs Hall sensor, current source, differential amplifier, comparator and source follower were integrated to form the first highly sensitive and low power (∼18 mW) III-V DC unipolar Hall integrated circuit. This is a three terminal device which utilises 2 μm technology, offering at least ∼50% higher switching sensitivity (∼ 6 mT) compared to the existing commercial unipolar ICs. The design and development of the GaAs 2DEG DC unipolar Hall IC has been presented in this paper in details.

Original language	English
Publication status	Published - 1 Jan 2014
Event	53rd Annual Conference of the British Institute of Non-Destructive Testing - Manchester, United Kingdom Duration: 9 Sept 2014 → 11 Sept 2014

Conference

Conference	53rd Annual Conference of the British Institute of Non-Destructive Testing
Abbreviated title	NDT 2014
Country/Territory	United Kingdom
City	Manchester
Period	9/09/14 → 11/09/14

Cite this

@conference{15ea67696af44e55a78c28adbb035594,

title = "Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits",

abstract = "GaAs-InGaAs-AlGaAs Hall sensor, current source, differential amplifier, comparator and source follower were integrated to form the first highly sensitive and low power (∼18 mW) III-V DC unipolar Hall integrated circuit. This is a three terminal device which utilises 2 μm technology, offering at least ∼50% higher switching sensitivity (∼ 6 mT) compared to the existing commercial unipolar ICs. The design and development of the GaAs 2DEG DC unipolar Hall IC has been presented in this paper in details.",

author = "M. Sadeghi and M. Missous",

year = "2014",

month = jan,

day = "1",

language = "English",

note = "53rd Annual Conference of the British Institute of Non-Destructive Testing, NDT 2014 ; Conference date: 09-09-2014 Through 11-09-2014",

}

TY - CONF

T1 - Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits

AU - Sadeghi, M.

AU - Missous, M.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - GaAs-InGaAs-AlGaAs Hall sensor, current source, differential amplifier, comparator and source follower were integrated to form the first highly sensitive and low power (∼18 mW) III-V DC unipolar Hall integrated circuit. This is a three terminal device which utilises 2 μm technology, offering at least ∼50% higher switching sensitivity (∼ 6 mT) compared to the existing commercial unipolar ICs. The design and development of the GaAs 2DEG DC unipolar Hall IC has been presented in this paper in details.

AB - GaAs-InGaAs-AlGaAs Hall sensor, current source, differential amplifier, comparator and source follower were integrated to form the first highly sensitive and low power (∼18 mW) III-V DC unipolar Hall integrated circuit. This is a three terminal device which utilises 2 μm technology, offering at least ∼50% higher switching sensitivity (∼ 6 mT) compared to the existing commercial unipolar ICs. The design and development of the GaAs 2DEG DC unipolar Hall IC has been presented in this paper in details.

UR - http://www.scopus.com/inward/record.url?scp=84917709149&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:84917709149

T2 - 53rd Annual Conference of the British Institute of Non-Destructive Testing

Y2 - 9 September 2014 through 11 September 2014

ER -

Development of the low power and highly sensitive GaAs 2DEG DC linear/unipolar Hall Effect integrated circuits

Abstract

Conference

Other files and links

Fingerprint

Cite this