Dielectric phase transition and relaxor behavior in BaTiO3/LaNiO3 superlattice

L Qiao, X F Bi

    Research output: Contribution to journalArticlepeer-review

    Abstract

    (001)-oriented BaTiO3/LaNiO3 superlattices with a symmetric structure were fabricated on LaNiO3 buffered Si substrates. The formation of superlattice was confirmed by X-ray diffraction and transmission electron microscope observations. In contrast to the sharp dielectric transition of pure bulk BaTiO3, a broad dielectric anomaly with shift in dielectric maxima toward higher temperature with increasing frequency is observed, suggesting the system exhibits diffusive phase transition following the Vogel-Fulcher relationship. Furthermore, with decreasing stacking periodicity, out-of-plane lattice constant of the superlattice is increased, room temperature dielectric constant is enhanced, while phase transition temperature is decreased. The observed structure-dielectricity correlation is attributed to both strain effect of the inserted LaNiO3 layer and the interfacial Maxwell-Wagner effect.
    Original languageEnglish
    Pages (from-to)1693-1696
    Number of pages4
    JournalCrystEngComm
    Volume13
    Issue number5
    DOIs
    Publication statusPublished - 2011

    Keywords

    • PULSED-LASER DEPOSITION
    • X-RAY REFLECTIVITY
    • BATIO3 THIN-FILMS
    • BUFFER
    • LAYER
    • BATIO3/SRTIO3 SUPERLATTICES
    • STRUCTURAL CHARACTERISTICS
    • ELECTRICAL-PROPERTIES
    • LANIO3
    • SUBSTRATE
    • THICKNESS

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