Differential isolation of a gyroelectric InSb disc

Zee M. Ng; Lionel E. Davis; Robin Sloan

doi:10.1002/mop.20161

Differential isolation of a gyroelectric InSb disc

Zee M. Ng, Lionel E. Davis, Robin Sloan

Research output: Contribution to journal › Letter › peer-review

Abstract

A 15-GHz InSb circulator supported with microstrip-slotline transitions is reported for the first time. The device showed a differential isolation of 15 dB over a fractional bandwidth of 6.7% at a temperature of 77°K with bias flux density of 0.78 Tesla. © 2004 Wiley Periodicals, Inc.

Original language	English
Pages (from-to)	433-434
Number of pages	1
Journal	Microwave and Optical Technology Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1002/mop.20161
Publication status	Published - 20 Jun 2004

Keywords

Circulator
InSb
Microstrip-slotline transition
Semiconductor

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10.1002/mop.20161

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title = "Differential isolation of a gyroelectric InSb disc",

abstract = "A 15-GHz InSb circulator supported with microstrip-slotline transitions is reported for the first time. The device showed a differential isolation of 15 dB over a fractional bandwidth of 6.7% at a temperature of 77°K with bias flux density of 0.78 Tesla. {\textcopyright} 2004 Wiley Periodicals, Inc.",

keywords = "Circulator, InSb, Microstrip-slotline transition, Semiconductor",

author = "Ng, {Zee M.} and Davis, {Lionel E.} and Robin Sloan",

year = "2004",

month = jun,

day = "20",

doi = "10.1002/mop.20161",

language = "English",

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journal = "Microwave and Optical Technology Letters",

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TY - JOUR

T1 - Differential isolation of a gyroelectric InSb disc

AU - Ng, Zee M.

AU - Davis, Lionel E.

AU - Sloan, Robin

PY - 2004/6/20

Y1 - 2004/6/20

N2 - A 15-GHz InSb circulator supported with microstrip-slotline transitions is reported for the first time. The device showed a differential isolation of 15 dB over a fractional bandwidth of 6.7% at a temperature of 77°K with bias flux density of 0.78 Tesla. © 2004 Wiley Periodicals, Inc.

AB - A 15-GHz InSb circulator supported with microstrip-slotline transitions is reported for the first time. The device showed a differential isolation of 15 dB over a fractional bandwidth of 6.7% at a temperature of 77°K with bias flux density of 0.78 Tesla. © 2004 Wiley Periodicals, Inc.

KW - Circulator

KW - InSb

KW - Microstrip-slotline transition

KW - Semiconductor

U2 - 10.1002/mop.20161

DO - 10.1002/mop.20161

M3 - Letter

VL - 41

SP - 433

EP - 434

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 6

ER -

Differential isolation of a gyroelectric InSb disc

Abstract

Keywords

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