Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

J. J. Hamilton*, N. E B Cowern, J. A. Sharp, K. J. Kirkby, E. J H Collart, B. Colombeau, M. Bersani, D. Giubertoni, A. Parisini

*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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