Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

P. Wang; A. L. Bleloch; M. Falke; P. J. Goodhew; J. Ng; M. Missous

doi:10.1063/1.2335361

Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

P. Wang, A. L. Bleloch, M. Falke, P. J. Goodhew, J. Ng, M. Missous

Research output: Contribution to journal › Article › peer-review

Abstract

The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic resolution was employed to measure compositional profiles across the center of a quantum dot and the adjacent wetting layer. The size and shape of the quantum dots were determined using the Z contrast in high angle annular dark field images. A substantial enrichment in indium at the top of the quantum dots was identified, which is consistent with theoretical predictions. © 2006 American Institute of Physics.

Original language	English
Article number	072111
Journal	Applied Physics Letters
Volume	89
Issue number	7
DOIs	https://doi.org/10.1063/1.2335361
Publication status	Published - 2006

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10.1063/1.2335361

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title = "Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy",

abstract = "The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic resolution was employed to measure compositional profiles across the center of a quantum dot and the adjacent wetting layer. The size and shape of the quantum dots were determined using the Z contrast in high angle annular dark field images. A substantial enrichment in indium at the top of the quantum dots was identified, which is consistent with theoretical predictions. {\textcopyright} 2006 American Institute of Physics.",

author = "P. Wang and Bleloch, {A. L.} and M. Falke and Goodhew, {P. J.} and J. Ng and M. Missous",

note = "Wang, P. Bleloch, A. L. Falke, M. Goodhew, P. J. Ng, J. Missous, M.",

year = "2006",

doi = "10.1063/1.2335361",

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journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

AU - Wang, P.

AU - Bleloch, A. L.

AU - Falke, M.

AU - Goodhew, P. J.

AU - Ng, J.

AU - Missous, M.

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PY - 2006

Y1 - 2006

N2 - The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic resolution was employed to measure compositional profiles across the center of a quantum dot and the adjacent wetting layer. The size and shape of the quantum dots were determined using the Z contrast in high angle annular dark field images. A substantial enrichment in indium at the top of the quantum dots was identified, which is consistent with theoretical predictions. © 2006 American Institute of Physics.

AB - The authors present a direct method to quantitatively measure the indium composition of buried InAs quantum dots embedded in a GaAs matrix. In this method, spatially resolved electron-energy-loss spectroscopy combined with aberration-corrected scanning transmission electron microscopy at atomic resolution was employed to measure compositional profiles across the center of a quantum dot and the adjacent wetting layer. The size and shape of the quantum dots were determined using the Z contrast in high angle annular dark field images. A substantial enrichment in indium at the top of the quantum dots was identified, which is consistent with theoretical predictions. © 2006 American Institute of Physics.

U2 - 10.1063/1.2335361

DO - 10.1063/1.2335361

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072111

ER -

Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

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