Abstract
The X-ray photoelectron spectroscopic deconvolution analysis is applied to quantitatively distinguish valence states of Ni and to obtain the delta value in LaNiO3-delta films on Si substrates. The mechanism of the Ni3+/Ni2+ ratio dependent transport is clarified by the combination of transport measurements and first-principle calculations. At lower Ni3+/Ni2+ ratio of 0.39, the LaNiO2.64 film exhibits semi-conductive behavior with carriers mainly being hopping polarons, while higher Ni3+/Ni2+ ratio transfers the LaNiO2.84 film to an electronic conductor. The observed reduction of the electron-phonon interaction, shortened mean free path, and increased electron-electron coupling are suggested to be correlated to high Ni3+/Ni2+ ratio. Copyright (c) EPLA, 2011
Original language | English |
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Journal | EPL |
Volume | 93 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- TRANSPORT-PROPERTIES
- THIN-FILMS
- RNIO3 R
- PEROVSKITES
- TEMPERATURE
- RESISTIVITY
- DEPOSITION
- CONDUCTION
- SUBSTRATE
- STATE