Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3-delta films on Si substrates

L Qiao; X F Bi

doi:10.1016/j.tsf.2010.08.129

Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3-delta films on Si substrates

L Qiao, X F Bi

Research output: Contribution to journal › Article › peer-review

Abstract

Highly (100) oriented LaNiO3 films with different oxygen content were deposited on Si substrates by radio frequency sputtering and post-annealed in oxygen and vacuum conditions The formation of oxygen vacancies is directly observed by a decrease of lattice oxygen ratio in O 1s core-level photoelectron spectroscopy X-ray diffraction measurement indicates that low oxygen pressure during the deposition or annealing process has a significant influence on the lattice constant of LaNiO3 films Further valence band spectra and transport measurements demonstrate that the oxygen vacancies also have a significant influence on the electronic structure and transport behaviors of final LaNiO3 films (C) 2010 Elsevier B V All rights reserved

Original language	English
Pages (from-to)	943-946
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2010.08.129
Publication status	Published - 2010

Keywords

Crystal structure
Transport property
Perovskites
Annealing
Oxygen
vacancies
METAL-INSULATOR-TRANSITION
PEROVSKITE-TYPE OXIDES
RNIO3 R
TEMPERATURE
RESISTIVITY
BEHAVIOR
PR
ND
SM

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10.1016/j.tsf.2010.08.129

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title = "Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3-delta films on Si substrates",

abstract = "Highly (100) oriented LaNiO3 films with different oxygen content were deposited on Si substrates by radio frequency sputtering and post-annealed in oxygen and vacuum conditions The formation of oxygen vacancies is directly observed by a decrease of lattice oxygen ratio in O 1s core-level photoelectron spectroscopy X-ray diffraction measurement indicates that low oxygen pressure during the deposition or annealing process has a significant influence on the lattice constant of LaNiO3 films Further valence band spectra and transport measurements demonstrate that the oxygen vacancies also have a significant influence on the electronic structure and transport behaviors of final LaNiO3 films (C) 2010 Elsevier B V All rights reserved",

keywords = "Crystal structure, Transport property, Perovskites, Annealing, Oxygen, vacancies, METAL-INSULATOR-TRANSITION, PEROVSKITE-TYPE OXIDES, RNIO3 R, TEMPERATURE, RESISTIVITY, BEHAVIOR, PR, ND, SM",

author = "L Qiao and Bi, {X F}",

note = "ISI Document Delivery No.: 683UA Times Cited: 1 Cited Reference Count: 36 Qiao, Liang Bi, Xiaofang ELSEVIER SCIENCE SA",

year = "2010",

doi = "10.1016/j.tsf.2010.08.129",

language = "English",

volume = "519",

pages = "943--946",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3-delta films on Si substrates

AU - Qiao, L

AU - Bi, X F

N1 - ISI Document Delivery No.: 683UA Times Cited: 1 Cited Reference Count: 36 Qiao, Liang Bi, Xiaofang ELSEVIER SCIENCE SA

PY - 2010

Y1 - 2010

N2 - Highly (100) oriented LaNiO3 films with different oxygen content were deposited on Si substrates by radio frequency sputtering and post-annealed in oxygen and vacuum conditions The formation of oxygen vacancies is directly observed by a decrease of lattice oxygen ratio in O 1s core-level photoelectron spectroscopy X-ray diffraction measurement indicates that low oxygen pressure during the deposition or annealing process has a significant influence on the lattice constant of LaNiO3 films Further valence band spectra and transport measurements demonstrate that the oxygen vacancies also have a significant influence on the electronic structure and transport behaviors of final LaNiO3 films (C) 2010 Elsevier B V All rights reserved

AB - Highly (100) oriented LaNiO3 films with different oxygen content were deposited on Si substrates by radio frequency sputtering and post-annealed in oxygen and vacuum conditions The formation of oxygen vacancies is directly observed by a decrease of lattice oxygen ratio in O 1s core-level photoelectron spectroscopy X-ray diffraction measurement indicates that low oxygen pressure during the deposition or annealing process has a significant influence on the lattice constant of LaNiO3 films Further valence band spectra and transport measurements demonstrate that the oxygen vacancies also have a significant influence on the electronic structure and transport behaviors of final LaNiO3 films (C) 2010 Elsevier B V All rights reserved

KW - Crystal structure

KW - Transport property

KW - Perovskites

KW - Annealing

KW - Oxygen

KW - vacancies

KW - METAL-INSULATOR-TRANSITION

KW - PEROVSKITE-TYPE OXIDES

KW - RNIO3 R

KW - TEMPERATURE

KW - RESISTIVITY

KW - BEHAVIOR

KW - PR

KW - ND

KW - SM

U2 - 10.1016/j.tsf.2010.08.129

DO - 10.1016/j.tsf.2010.08.129

M3 - Article

SN - 0040-6090

VL - 519

SP - 943

EP - 946

JO - Thin Solid Films

JF - Thin Solid Films

IS - 2

ER -

Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3-delta films on Si substrates

Abstract

Keywords

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