Dislocation core structures in (0001) InGaN

S. L. Rhode; M. K. Horton; S. L. Sahonta; M. J. Kappers; S. J. Haigh; T. J. Pennycook; C. McAleese; C. J. Humphreys; R. O. Dusane; M. A. Moram

doi:10.1063/1.4942847

Dislocation core structures in (0001) InGaN

S. L. Rhode, M. K. Horton, S. L. Sahonta, M. J. Kappers, S. J. Haigh, T. J. Pennycook, C. McAleese, C. J. Humphreys, R. O. Dusane, M. A. Moram

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Abstract

Threading dislocation core structures in c-plane GaN and In_xGa_1- _xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In_xGa_1- _xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In_xGa_1- _xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In_xGa_1- _xN, consistent with predictions from atomistic Monte Carlo simulations.

Original language	English
Article number	105301
Journal	Journal of Applied Physics
Volume	119
Issue number	10
DOIs	https://doi.org/10.1063/1.4942847
Publication status	Published - 14 Mar 2016

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title = "Dislocation core structures in (0001) InGaN",

abstract = "Threading dislocation core structures in c-plane GaN and InxGa1- xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1- xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1- xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1- xN, consistent with predictions from atomistic Monte Carlo simulations.",

author = "Rhode, {S. L.} and Horton, {M. K.} and Sahonta, {S. L.} and Kappers, {M. J.} and Haigh, {S. J.} and Pennycook, {T. J.} and C. McAleese and Humphreys, {C. J.} and Dusane, {R. O.} and Moram, {M. A.}",

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doi = "10.1063/1.4942847",

language = "English",

volume = "119",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Dislocation core structures in (0001) InGaN

AU - Rhode, S. L.

AU - Horton, M. K.

AU - Sahonta, S. L.

AU - Kappers, M. J.

AU - Haigh, S. J.

AU - Pennycook, T. J.

AU - McAleese, C.

AU - Humphreys, C. J.

AU - Dusane, R. O.

AU - Moram, M. A.

PY - 2016/3/14

Y1 - 2016/3/14

N2 - Threading dislocation core structures in c-plane GaN and InxGa1- xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1- xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1- xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1- xN, consistent with predictions from atomistic Monte Carlo simulations.

AB - Threading dislocation core structures in c-plane GaN and InxGa1- xN (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and InxGa1- xN. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in InxGa1- xN, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in InxGa1- xN, consistent with predictions from atomistic Monte Carlo simulations.

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U2 - 10.1063/1.4942847

DO - 10.1063/1.4942847

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SN - 0021-8979

VL - 119

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 105301

ER -

Dislocation core structures in (0001) InGaN

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