Distribution of deep levels in the GaAs layers of GaAs/AlxGa1-xAs heterostructures grown by MOCVD

D. Allsopp; A. R. Peaker; E. J. Thrush; G. Wale-Evans

doi:10.1016/0022-0248(84)90428-7

Distribution of deep levels in the GaAs layers of GaAs/Al_xGa_1-xAs heterostructures grown by MOCVD

D. Allsopp, A. R. Peaker, E. J. Thrush, G. Wale-Evans

Standard Telephone Laboratories Ltd.

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Abstract

The spatial distributions of deep electron levels in the GaAs layers of GaAs-Al_xGa_1-xAs heterostructures grown by MOCVD have been measured. Deep states frequently observed in MOCVD Al_xGa_1-xAs, but not normally found in MOCVD GaAs, were detected. The distributions of these deep levels indicate that their incorporation is related to the contamination of the reactor during the growth of Al_xGa_1-xAs. The role of vacancies in this process is also discussed.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Journal of Crystal Growth
Volume	68
Issue number	1
DOIs	https://doi.org/10.1016/0022-0248(84)90428-7
Publication status	Published - 1 Sept 1984

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10.1016/0022-0248(84)90428-7

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title = "Distribution of deep levels in the GaAs layers of GaAs/AlxGa1-xAs heterostructures grown by MOCVD",

abstract = "The spatial distributions of deep electron levels in the GaAs layers of GaAs-AlxGa1-xAs heterostructures grown by MOCVD have been measured. Deep states frequently observed in MOCVD AlxGa1-xAs, but not normally found in MOCVD GaAs, were detected. The distributions of these deep levels indicate that their incorporation is related to the contamination of the reactor during the growth of AlxGa1-xAs. The role of vacancies in this process is also discussed.",

author = "D. Allsopp and Peaker, {A. R.} and Thrush, {E. J.} and G. Wale-Evans",

year = "1984",

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T1 - Distribution of deep levels in the GaAs layers of GaAs/AlxGa1-xAs heterostructures grown by MOCVD

AU - Allsopp, D.

AU - Peaker, A. R.

AU - Thrush, E. J.

AU - Wale-Evans, G.

PY - 1984/9/1

Y1 - 1984/9/1

N2 - The spatial distributions of deep electron levels in the GaAs layers of GaAs-AlxGa1-xAs heterostructures grown by MOCVD have been measured. Deep states frequently observed in MOCVD AlxGa1-xAs, but not normally found in MOCVD GaAs, were detected. The distributions of these deep levels indicate that their incorporation is related to the contamination of the reactor during the growth of AlxGa1-xAs. The role of vacancies in this process is also discussed.

AB - The spatial distributions of deep electron levels in the GaAs layers of GaAs-AlxGa1-xAs heterostructures grown by MOCVD have been measured. Deep states frequently observed in MOCVD AlxGa1-xAs, but not normally found in MOCVD GaAs, were detected. The distributions of these deep levels indicate that their incorporation is related to the contamination of the reactor during the growth of AlxGa1-xAs. The role of vacancies in this process is also discussed.

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U2 - 10.1016/0022-0248(84)90428-7

DO - 10.1016/0022-0248(84)90428-7

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JF - Journal of Crystal Growth

IS - 1

ER -

Distribution of deep levels in the GaAs layers of GaAs/Al_xGa_1-xAs heterostructures grown by MOCVD

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