Divacancy-related complexes in Si(1-x)Ge(x)

L. I. Khirunenko, Yu V. Pomozov, M. G. Sosnin, M. O. Trypachko, A. V. Duvanskii, N. V. Abrosimov, H. Riemann, S. B. Lastovskii, L. I. Murin, V. P. Markevich, A. R. Peaker

    Research output: Contribution to journalArticlepeer-review


    In the present work, V2-related defects have been studied in SiGe alloys by means of infrared (IR) absorption spectroscopy, electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS). The defects have been induced by electron irradiations at 80 K and subsequent isochronal anneals. In oxygen-lean SiGe samples after annealing out of Ge-V centers in the temperature range of 250-300 K an absorption band with maximum at about 5680 cm-1 has been found. An appearance of a new EPR signal Si-UA1 has been registered simultaneously. It is found from an analysis of the angular dependences of the EPR spectrum that the corresponding center has monoclinic-I symmetry with the principal values of g tensor: g1=2.0154, g2=2.0084 and g3=2.0039. It is argued that the absorption line and the EPR signal are related to Ge-V2 complex. The formation of Ge-V2 centers has also occurred upon heat treatments of SiGe samples in the temperature range of 400-450 K. It is associated with the capture of mobile divacancies by Ge atoms. The disappearance of the Ge-V2 center upon heat treatments at T>480 K is found to result in a shift of the absorption band to lower frequencies and in a shift of a DLTS peak associated with the Ge-V2(+/0) transition to higher temperatures. It is suggested that these shifts are related to a conversion of Ge-V2 centers into Ge2-V2 complexes.

    Original languageEnglish
    Pages (from-to)525-530
    Number of pages6
    JournalMaterials science in semiconductor processing
    Issue number4-5 SPEC. ISS.
    Publication statusPublished - 1 Jan 2006


    • Alloys
    • Electron paramagnetic resonance (EPR)

    Research Beacons, Institutes and Platforms

    • Photon Science Institute


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