Donor level of interstitial hydrogen in GaAs

L. Dobaczewski; K. Bonde Nielsen; A. Nylandsted Larsen; A. R. Peaker

doi:10.1016/j.physb.2005.12.155

Donor level of interstitial hydrogen in GaAs

L. Dobaczewski^*, K. Bonde Nielsen, A. Nylandsted Larsen, A. R. Peaker

^*Corresponding author for this work

University of Aarhus

Research output: Contribution to journal › Conference article › peer-review

Abstract

The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14 eV. Above 100 K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs.

Original language	English
Pages (from-to)	614-617
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
DOIs	https://doi.org/10.1016/j.physb.2005.12.155
Publication status	Published - 1 Apr 2006
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Keywords

Hydrogen in GaAs
Laplace DLTS
Universal level alignment

Research Beacons, Institutes and Platforms

Photon Science Institute

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.physb.2005.12.155

Cite this

@article{837993d55dcc41e9801933c227b9807d,

title = "Donor level of interstitial hydrogen in GaAs",

abstract = "The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14 eV. Above 100 K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs.",

keywords = "Hydrogen in GaAs, Laplace DLTS, Universal level alignment",

author = "L. Dobaczewski and {Bonde Nielsen}, K. and {Nylandsted Larsen}, A. and Peaker, {A. R.}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.155",

language = "English",

volume = "376-377",

pages = "614--617",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Donor level of interstitial hydrogen in GaAs

AU - Dobaczewski, L.

AU - Bonde Nielsen, K.

AU - Nylandsted Larsen, A.

AU - Peaker, A. R.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14 eV. Above 100 K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs.

AB - The first data evidencing the existence of the donor level of the interstitial hydrogen in GaAs are presented. The abundant formation of the (0/+) donor level after in situ low-temperature implantation of hydrogen into the depletion layer of GaAs Schottky diodes has been observed and the activation energy and annealing properties have been determined by Laplace DLTS. The activation energy for electron emission of this donor state is 0.14 eV. Above 100 K the hydrogen deep donor state is unstable, converting to a more stable form when there are electrons available for the capture process. A slightly perturbed form of the hydrogen donor in its neutral charge state can be recovered by illuminating the sample. This process releases twice as many electrons as the ionisation process of the hydrogen donor state itself. This fact, by analogy with the silicon case, evidences the negative-U behaviour of hydrogen in GaAs.

KW - Hydrogen in GaAs

KW - Laplace DLTS

KW - Universal level alignment

UR - http://www.scopus.com/inward/record.url?scp=33645137564&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2005.12.155

DO - 10.1016/j.physb.2005.12.155

M3 - Conference article

AN - SCOPUS:33645137564

SN - 0921-4526

VL - 376-377

SP - 614

EP - 617

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Donor level of interstitial hydrogen in GaAs

Abstract

Keywords

Research Beacons, Institutes and Platforms

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this