Dopant and As4/Ga flux ratio influence on the electrical and structural properties of LT GaAs

S. P. O'Hagan; M. Missous

Dopant and As₄/Ga flux ratio influence on the electrical and structural properties of LT GaAs

S. P. O'Hagan, M. Missous

EEE - Academic & Research

Research output: Contribution to journal › Conference article › peer-review

Abstract

Double crystal x-ray diffraction and Hall effect measurements have been performed on GaAs layers grown by molecular beam epitaxy at low substrate temperature (200-250°C). The concentration of excess As incorporated in undoped material is found to be a strong function of growth temperature but not of As₄/Ga beam equivalent pressure ratio at a given temperature. Doping with Si or Be at concentrations of 10¹⁹cm^-3 or greater has resulted in significant reduction of excess As concentration in layers grown at 250°C. This effect is seen to diminish with reducing substrate temperature. The effect is not seen when Se is used as the doping source. Reducing As overpressure in the presence of such a high doping concentrations has led to highly electrically active n- and p-type layers grown at 250°C.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	340
Publication status	Published - 1 Dec 1994
Event	Proceedings of the MRS Symposium - San Francisco, CA, USA Duration: 4 Apr 1994 → 7 Apr 1994

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@article{6174de4534e247808df53ad179f14291,

title = "Dopant and As4/Ga flux ratio influence on the electrical and structural properties of LT GaAs",

abstract = "Double crystal x-ray diffraction and Hall effect measurements have been performed on GaAs layers grown by molecular beam epitaxy at low substrate temperature (200-250°C). The concentration of excess As incorporated in undoped material is found to be a strong function of growth temperature but not of As4/Ga beam equivalent pressure ratio at a given temperature. Doping with Si or Be at concentrations of 1019cm-3 or greater has resulted in significant reduction of excess As concentration in layers grown at 250°C. This effect is seen to diminish with reducing substrate temperature. The effect is not seen when Se is used as the doping source. Reducing As overpressure in the presence of such a high doping concentrations has led to highly electrically active n- and p-type layers grown at 250°C.",

author = "O'Hagan, {S. P.} and M. Missous",

year = "1994",

month = dec,

day = "1",

language = "English",

volume = "340",

pages = "295--300",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the MRS Symposium ; Conference date: 04-04-1994 Through 07-04-1994",

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TY - JOUR

T1 - Dopant and As4/Ga flux ratio influence on the electrical and structural properties of LT GaAs

AU - O'Hagan, S. P.

AU - Missous, M.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Double crystal x-ray diffraction and Hall effect measurements have been performed on GaAs layers grown by molecular beam epitaxy at low substrate temperature (200-250°C). The concentration of excess As incorporated in undoped material is found to be a strong function of growth temperature but not of As4/Ga beam equivalent pressure ratio at a given temperature. Doping with Si or Be at concentrations of 1019cm-3 or greater has resulted in significant reduction of excess As concentration in layers grown at 250°C. This effect is seen to diminish with reducing substrate temperature. The effect is not seen when Se is used as the doping source. Reducing As overpressure in the presence of such a high doping concentrations has led to highly electrically active n- and p-type layers grown at 250°C.

AB - Double crystal x-ray diffraction and Hall effect measurements have been performed on GaAs layers grown by molecular beam epitaxy at low substrate temperature (200-250°C). The concentration of excess As incorporated in undoped material is found to be a strong function of growth temperature but not of As4/Ga beam equivalent pressure ratio at a given temperature. Doping with Si or Be at concentrations of 1019cm-3 or greater has resulted in significant reduction of excess As concentration in layers grown at 250°C. This effect is seen to diminish with reducing substrate temperature. The effect is not seen when Se is used as the doping source. Reducing As overpressure in the presence of such a high doping concentrations has led to highly electrically active n- and p-type layers grown at 250°C.

UR - http://www.scopus.com/inward/record.url?scp=0028572910&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028572910

SN - 0272-9172

VL - 340

SP - 295

EP - 300

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the MRS Symposium

Y2 - 4 April 1994 through 7 April 1994

ER -

Dopant and As₄/Ga flux ratio influence on the electrical and structural properties of LT GaAs

Abstract

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