E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

A. Koizumi; V. P. Markevich; N. Iwamoto; S. Sasaki; T. Ohshima; K. Kojima; T. Kimoto; K. Uchida; S. Nozaki; B. Hamilton; A. R. Peaker

doi:10.1063/1.4788814

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC. © 2013 American Institute of Physics.

Original language	English
Article number	032104
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4788814
Publication status	Published - 21 Jan 2013

Keywords

deep level transient spectroscopy - electron emission - electron traps - energy gap - semiconductor diodes - semiconductor epitaxial layers - silicon compounds - vacancies (crystal) - wide band gap semiconductors

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Cite this

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title = "E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy",

abstract = "Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC. {\textcopyright} 2013 American Institute of Physics.",

keywords = "deep level transient spectroscopy - electron emission - electron traps - energy gap - semiconductor diodes - semiconductor epitaxial layers - silicon compounds - vacancies (crystal) - wide band gap semiconductors",

author = "A. Koizumi and Markevich, {V. P.} and N. Iwamoto and S. Sasaki and T. Ohshima and K. Kojima and T. Kimoto and K. Uchida and S. Nozaki and B. Hamilton and Peaker, {A. R.}",

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T1 - E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

AU - Koizumi, A.

AU - Markevich, V. P.

AU - Iwamoto, N.

AU - Sasaki, S.

AU - Ohshima, T.

AU - Kojima, K.

AU - Kimoto, T.

AU - Uchida, K.

AU - Nozaki, S.

AU - Hamilton, B.

AU - Peaker, A. R.

N1 - cited By (since 1996)1

PY - 2013/1/21

Y1 - 2013/1/21

N2 - Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC. © 2013 American Institute of Physics.

AB - Electrically active defects in n-type 6H-SiC diode structures have been studied by deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is shown that the commonly observed broadened DLTS peak previously ascribed to two traps referenced as E1/E2 has three components with activation energies for electron emission of 0.39, 0.43, and 0.44 eV. Further, defects associated with these emission signals have similar electronic structure, each possessing two energy levels with negative-U ordering in the upper half of the 6H-SiC gap. It is argued that the defects are related to a carbon vacancy at three non-equivalent lattice sites in 6H-SiC. © 2013 American Institute of Physics.

KW - deep level transient spectroscopy - electron emission - electron traps - energy gap - semiconductor diodes - semiconductor epitaxial layers - silicon compounds - vacancies (crystal) - wide band gap semiconductors

U2 - 10.1063/1.4788814

DO - 10.1063/1.4788814

M3 - Article

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032104

ER -

E1/E2 traps in 6H-SiC studied with Laplace deep level transient spectroscopy

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