Edge photocurrent in bilayer graphene due to inter-Landau-level transitions

S. Candussio, M. V. Durnev, S. Slizovskiy, J. Keil, V. V. Bel'kov, J. Yin, Y. Yang, S. -K. Son, A. Mishchenko, V. Fal'ko, S. D. Ganichev

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Abstract

We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures.
Original languageEnglish
Article number125408
Pages (from-to)125408
JournalPhys. Rev. B
Volume103
Issue number12
DOIs
Publication statusPublished - 4 Mar 2021

Research Beacons, Institutes and Platforms

  • National Graphene Institute

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