Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

Justin J. Hamilton, Erik J H Collart, Benjamin Colombeau, Massimo Bersani, Damiano Giubertoni, Max Kah, Nicholas E B Cowern, Karen J. Kirkby

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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