Effect of fluorine implantation dose on boron thermal diffusion in silicon

H. A W El Mubarek; J. M. Bonar; G. D. Dilliway; P. Ashburn; M. Karunaratne; A. F. Willoughby; Y. Wang; P. L F Hemment; R. Price; J. Zhang; P. Ward

doi:10.1063/1.1790063

Effect of fluorine implantation dose on boron thermal diffusion in silicon

H. A W El Mubarek, J. M. Bonar, G. D. Dilliway, P. Ashburn, M. Karunaratne, A. F. Willoughby, Y. Wang, P. L F Hemment, R. Price, J. Zhang, P. Ward

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of flouring implantation with a dose in the range of 5×1014∓2.3×1015 cm ∓2 on boron thermal diffusion in silicon was investigated. The Secondary Ion Mass Spectroscopy (SIMS) profiles of boron mark layers were presented for fluorine doses and compared with fluorine profiles. It was observed that the SIMS profiles exhibited reduced boron thermal diffusion above a critical F+ dose of 0.9∓1.4×1015 cm ∓2. The result shows that the suppression of ]boron thermal diffusion is due to the effect of the clusters in suppressing the concentration of boron.

Original language	English
Pages (from-to)	4114-4121
Number of pages	7
Journal	Journal of Applied Physics
Volume	96
Issue number	8
DOIs	https://doi.org/10.1063/1.1790063
Publication status	Published - 15 Oct 2004

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@article{939990033d454568966e3bdf1470a293,

title = "Effect of fluorine implantation dose on boron thermal diffusion in silicon",

abstract = "The effect of flouring implantation with a dose in the range of 5×1014∓2.3×1015 cm ∓2 on boron thermal diffusion in silicon was investigated. The Secondary Ion Mass Spectroscopy (SIMS) profiles of boron mark layers were presented for fluorine doses and compared with fluorine profiles. It was observed that the SIMS profiles exhibited reduced boron thermal diffusion above a critical F+ dose of 0.9∓1.4×1015 cm ∓2. The result shows that the suppression of ]boron thermal diffusion is due to the effect of the clusters in suppressing the concentration of boron.",

author = "{El Mubarek}, {H. A W} and Bonar, {J. M.} and Dilliway, {G. D.} and P. Ashburn and M. Karunaratne and Willoughby, {A. F.} and Y. Wang and Hemment, {P. L F} and R. Price and J. Zhang and P. Ward",

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day = "15",

doi = "10.1063/1.1790063",

language = "English",

volume = "96",

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TY - JOUR

T1 - Effect of fluorine implantation dose on boron thermal diffusion in silicon

AU - El Mubarek, H. A W

AU - Bonar, J. M.

AU - Dilliway, G. D.

AU - Ashburn, P.

AU - Karunaratne, M.

AU - Willoughby, A. F.

AU - Wang, Y.

AU - Hemment, P. L F

AU - Price, R.

AU - Zhang, J.

AU - Ward, P.

N1 - Times Cited: 18

PY - 2004/10/15

Y1 - 2004/10/15

N2 - The effect of flouring implantation with a dose in the range of 5×1014∓2.3×1015 cm ∓2 on boron thermal diffusion in silicon was investigated. The Secondary Ion Mass Spectroscopy (SIMS) profiles of boron mark layers were presented for fluorine doses and compared with fluorine profiles. It was observed that the SIMS profiles exhibited reduced boron thermal diffusion above a critical F+ dose of 0.9∓1.4×1015 cm ∓2. The result shows that the suppression of ]boron thermal diffusion is due to the effect of the clusters in suppressing the concentration of boron.

AB - The effect of flouring implantation with a dose in the range of 5×1014∓2.3×1015 cm ∓2 on boron thermal diffusion in silicon was investigated. The Secondary Ion Mass Spectroscopy (SIMS) profiles of boron mark layers were presented for fluorine doses and compared with fluorine profiles. It was observed that the SIMS profiles exhibited reduced boron thermal diffusion above a critical F+ dose of 0.9∓1.4×1015 cm ∓2. The result shows that the suppression of ]boron thermal diffusion is due to the effect of the clusters in suppressing the concentration of boron.

U2 - 10.1063/1.1790063

DO - 10.1063/1.1790063

M3 - Article

SN - 1089-7550

VL - 96

SP - 4114

EP - 4121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Abstract

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