Effect of implant conditions on the optical and structural properties of β-FeSi2

T. M. Butler; C. N. McKinty; K. P. Homewood; R. M. Gwilliam; K. J. Kirkby; G. Shao; S. Edwards

doi:10.1109/IIT.2002.1258071

Effect of implant conditions on the optical and structural properties of β-FeSi₂

T. M. Butler, C. N. McKinty, K. P. Homewood, R. M. Gwilliam, K. J. Kirkby, G. Shao, S. Edwards

Division of Cancer Sciences (L5)

University of Surrey

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Semiconducting precipitates of β-FeSi₂ have been successfully fabricated in silicon by high dose Fe⁺ implantation (typically 1.5 × 10¹⁶ Fe cm^-2 at 200keV). Room temperature electroluminescence (EL) at 1.5μm has been observed from light emitting diodes (LED's) incorporating this type of structure. This study is to evaluate how the microstructure and optical properties are affected by the implantation parameters, in particular the role of implantation temperature, when high beam current densities are being used. This was done in order to evaluate whether the implant period could be reduced to a commercially realistic time without adversely affecting the optical properties. In this study the implantation temperature was varied and the resulting structures investigated (before and after annealing) using optical absorption, Fourier Transform Infrared Spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (XTEM). A 70 meV decrease in the optical band gap was observed between a sample implanted at 250°C and one implanted at 550°C, a shift in the FTIR spectrum was also observed. RBS and XTEM measurements showed that this change was associated with a change from a surface to a buried silicide layer, with the latter also exhibiting room temperature EL.

Original language	English
Title of host publication	Proceedings of the International Conference on Ion Implantation Technology
Publisher	IEEE
Pages	579-582
Number of pages	4
Volume	22-27-September-2002
ISBN (Print)	0780371550
DOIs	https://doi.org/10.1109/IIT.2002.1258071
Publication status	Published - 2002
Event	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States Duration: 22 Sept 2002 → 27 Sept 2002

Conference

Conference	2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
Country/Territory	United States
City	Taos
Period	22/09/02 → 27/09/02

Keywords

Fe implantation into silicon
FTIR
Ion Beam synthesis
optoelectronic devices in silicon
RBS
room temperature electroluminescence
βFeSi

Access to Document

10.1109/IIT.2002.1258071

Cite this

Butler, T. M., McKinty, C. N., Homewood, K. P., Gwilliam, R. M., Kirkby, K. J., Shao, G., & Edwards, S. (2002). Effect of implant conditions on the optical and structural properties of β-FeSi₂. In Proceedings of the International Conference on Ion Implantation Technology (Vol. 22-27-September-2002, pp. 579-582). Article 1258071 IEEE. https://doi.org/10.1109/IIT.2002.1258071

@inproceedings{702d5afc2dcc413c84191dd0535f6171,

title = "Effect of implant conditions on the optical and structural properties of β-FeSi2",

abstract = "Semiconducting precipitates of β-FeSi2 have been successfully fabricated in silicon by high dose Fe+ implantation (typically 1.5 × 1016 Fe cm-2 at 200keV). Room temperature electroluminescence (EL) at 1.5μm has been observed from light emitting diodes (LED's) incorporating this type of structure. This study is to evaluate how the microstructure and optical properties are affected by the implantation parameters, in particular the role of implantation temperature, when high beam current densities are being used. This was done in order to evaluate whether the implant period could be reduced to a commercially realistic time without adversely affecting the optical properties. In this study the implantation temperature was varied and the resulting structures investigated (before and after annealing) using optical absorption, Fourier Transform Infrared Spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (XTEM). A 70 meV decrease in the optical band gap was observed between a sample implanted at 250°C and one implanted at 550°C, a shift in the FTIR spectrum was also observed. RBS and XTEM measurements showed that this change was associated with a change from a surface to a buried silicide layer, with the latter also exhibiting room temperature EL.",

keywords = "Fe implantation into silicon, FTIR, Ion Beam synthesis, optoelectronic devices in silicon, RBS, room temperature electroluminescence, βFeSi",

author = "Butler, \{T. M.\} and McKinty, \{C. N.\} and Homewood, \{K. P.\} and Gwilliam, \{R. M.\} and Kirkby, \{K. J.\} and G. Shao and S. Edwards",

year = "2002",

doi = "10.1109/IIT.2002.1258071",

language = "English",

isbn = "0780371550",

volume = "22-27-September-2002",

pages = "579--582",

booktitle = "Proceedings of the International Conference on Ion Implantation Technology",

publisher = "IEEE",

address = "United States",

note = "2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 ; Conference date: 22-09-2002 Through 27-09-2002",

}

Butler, TM, McKinty, CN, Homewood, KP, Gwilliam, RM, Kirkby, KJ, Shao, G & Edwards, S 2002, Effect of implant conditions on the optical and structural properties of β-FeSi₂. in Proceedings of the International Conference on Ion Implantation Technology. vol. 22-27-September-2002, 1258071, IEEE, pp. 579-582, 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002, Taos, United States, 22/09/02. https://doi.org/10.1109/IIT.2002.1258071

Effect of implant conditions on the optical and structural properties of β-FeSi₂. / Butler, T. M.; McKinty, C. N.; Homewood, K. P. et al.
Proceedings of the International Conference on Ion Implantation Technology. Vol. 22-27-September-2002 IEEE, 2002. p. 579-582 1258071.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

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AU - Butler, T. M.

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AU - Gwilliam, R. M.

AU - Kirkby, K. J.

AU - Shao, G.

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AB - Semiconducting precipitates of β-FeSi2 have been successfully fabricated in silicon by high dose Fe+ implantation (typically 1.5 × 1016 Fe cm-2 at 200keV). Room temperature electroluminescence (EL) at 1.5μm has been observed from light emitting diodes (LED's) incorporating this type of structure. This study is to evaluate how the microstructure and optical properties are affected by the implantation parameters, in particular the role of implantation temperature, when high beam current densities are being used. This was done in order to evaluate whether the implant period could be reduced to a commercially realistic time without adversely affecting the optical properties. In this study the implantation temperature was varied and the resulting structures investigated (before and after annealing) using optical absorption, Fourier Transform Infrared Spectroscopy (FTIR), Rutherford backscattering spectroscopy (RBS) and cross sectional transmission electron microscopy (XTEM). A 70 meV decrease in the optical band gap was observed between a sample implanted at 250°C and one implanted at 550°C, a shift in the FTIR spectrum was also observed. RBS and XTEM measurements showed that this change was associated with a change from a surface to a buried silicide layer, with the latter also exhibiting room temperature EL.

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