Effect of Micron-scale Photoluminescence Variation on Droop Measurements in InGaN/GaN Quantum Wells

Rachel Barrett, Ruben Ahumada Lazo, Juan Arturo Alanis Azuara, Patrick Parkinson, Stephen Church, Menno J. Kappers, Rachel A. Oliver, David Binks

Research output: Chapter in Book/Conference proceedingConference contributionpeer-review

Abstract

Micro-photoluminescence maps reveal micron-scale spatial variation in intensity, peak emission energy and bandwidth across InGaN/GaN quantum wells. To investigate the effect of this spatial variation on measurements of the dependence of emission efficiency on carrier density, excitation power-dependent emission was collected from a bright and dark region on each of blue-and green emitting samples. The onset of efficiency droop was found to occur at a greater carrier density in the dark regions than in the bright, by factors of 1.2 and 1.8 in the blue and green-emitting samples, respectively. By spatially integrating the emission from progressively larger areas, it is also shown that collection areas greater than ~50 μm in diameter are required to reduce the intensity variation to less than 10%.
Original languageEnglish
Title of host publicationJ. Phys.: Conf. Ser.
Place of PublicationBristol
PublisherIOP Publishing Ltd
Volume1919
Edition1
DOIs
Publication statusPublished - 1 May 2021

Publication series

NameJournal of Physics: Conference Series
PublisherIOP Publishing Ltd
ISSN (Print)1742-6588

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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