Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a-plane GaN

T. J. Badcock, M. Häberlen, M. J. Kappers, M. A. Moram, P. Dawson, C. J. Humphreys, R. A. Oliver

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We investigate the optical properties of lateral epitaxially overgrown non-polar a-plane GaN using photo-luminescence and spatially resolved cathodo-luminescence spectroscopy. Despite the decreased density of extended defects relative to a-plane templates, in material overgrown at a low V:III ratio (57), the low temperature emission spectrum is very weak and is dominated by impurity bands centred at 2.92 and 2.25 eV. On subsequent overgrowth at a higher V:III ratio (260), the intensity of the near band edge emission increases by many orders of magnitude and a donor-acceptor pair band is seen. We suggest that the dramatic modification of the optical properties is related to the impurity or point-defect incorporation rate at the different V:III ratios employed. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
    Original languageEnglish
    Pages (from-to)2088-2090
    Number of pages2
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume7
    Issue number7-8
    DOIs
    Publication statusPublished - 2010

    Keywords

    • Cathodoluminescence
    • GaN
    • MOVPE
    • Photoluminescence
    • Point defects

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