Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

W. M. Zheng; M. P. Halsall; P. Harmer; P. Harrison; M. J. Steer

doi:10.1063/1.1644912

Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

W. M. Zheng, M. P. Halsall, P. Harmer, P. Harrison, M. J. Steer

Research output: Contribution to journal › Article › peer-review

Abstract

The effect of quantum well (QW) confinement on the transitions of shallow acceptors confined in GaAs/AlAs multiple QW (MQW) was studied. The photoluminescence (PL) spectra were measured at various temperatures, and two-hole transitions of the acceptor-bound exciton were observed for a series of beryllium (Be) δ-doped GaAs/AlAs MQWs and GaAs:Be epilayers. The growth of the layers was performed using the technique of stoichiometric low-temperature growth. The results show that the acceptor transition energy between the ground state and the excited state increases as the effect of the QW confinement is enhanced.

Original language	English
Pages (from-to)	735-737
Number of pages	2
Journal	Applied Physics Letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.1644912
Publication status	Published - 2 Feb 2004

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title = "Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells",

abstract = "The effect of quantum well (QW) confinement on the transitions of shallow acceptors confined in GaAs/AlAs multiple QW (MQW) was studied. The photoluminescence (PL) spectra were measured at various temperatures, and two-hole transitions of the acceptor-bound exciton were observed for a series of beryllium (Be) δ-doped GaAs/AlAs MQWs and GaAs:Be epilayers. The growth of the layers was performed using the technique of stoichiometric low-temperature growth. The results show that the acceptor transition energy between the ground state and the excited state increases as the effect of the QW confinement is enhanced.",

author = "Zheng, {W. M.} and Halsall, {M. P.} and P. Harmer and P. Harrison and Steer, {M. J.}",

year = "2004",

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doi = "10.1063/1.1644912",

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T1 - Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

AU - Zheng, W. M.

AU - Halsall, M. P.

AU - Harmer, P.

AU - Harrison, P.

AU - Steer, M. J.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - The effect of quantum well (QW) confinement on the transitions of shallow acceptors confined in GaAs/AlAs multiple QW (MQW) was studied. The photoluminescence (PL) spectra were measured at various temperatures, and two-hole transitions of the acceptor-bound exciton were observed for a series of beryllium (Be) δ-doped GaAs/AlAs MQWs and GaAs:Be epilayers. The growth of the layers was performed using the technique of stoichiometric low-temperature growth. The results show that the acceptor transition energy between the ground state and the excited state increases as the effect of the QW confinement is enhanced.

AB - The effect of quantum well (QW) confinement on the transitions of shallow acceptors confined in GaAs/AlAs multiple QW (MQW) was studied. The photoluminescence (PL) spectra were measured at various temperatures, and two-hole transitions of the acceptor-bound exciton were observed for a series of beryllium (Be) δ-doped GaAs/AlAs MQWs and GaAs:Be epilayers. The growth of the layers was performed using the technique of stoichiometric low-temperature growth. The results show that the acceptor transition energy between the ground state and the excited state increases as the effect of the QW confinement is enhanced.

U2 - 10.1063/1.1644912

DO - 10.1063/1.1644912

M3 - Article

SN - 0003-6951

VL - 84

SP - 735

EP - 737

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Effect of quantum confinement on shallow acceptor transitions in δ-doped GaAs/AlAs multiple-quantum wells

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