Effect of the tilt angle on antimony in silicon implanted wafers

G. Claudio, K. J. Kirkby, M. Bersani, R. Low, B. J. Sealy, R. Gwilliam

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of changing the tilt angle on the substitutional fraction and the electrical activation of the dopant antimony (Sb) were analyzed. The silicon (Si) wafers were implanted with a dose of 5.0×10 14 Sb + ions cm -2 at an energy of 70 keV, with tilt angles of 0°, 15°, 30°, 45°, and 60°. The retained dose and the substitutional fraction of antimony in the preamorphized and crystalline samples were quantified using ion channeling measurements and Rutherford backscattering spectroscopy. It was observed that the substitutional fraction was a function of the tilt angle and was correlated with the fraction of electrically activated Sb atoms.

Original languageEnglish
Pages (from-to)5471-5474
Number of pages4
JournalJournal of Applied Physics
Volume95
Issue number10
DOIs
Publication statusPublished - 15 May 2004

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