Effective g* factor of two-dimensional electrons in GaN/AlGaN heterojunctions

W. Knap, E. Frayssinet, M. L. Sadowski, C. Skierbiszewski, D. Maude, V. Falko, M. Asif Khan, M. S. Shur

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 ±0.002 m0 The Lande g factor for the 2D electrons (g = 2.06±0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field.

    Original languageEnglish
    Pages (from-to)3156-3158
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number20
    Publication statusPublished - 15 Nov 1999

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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