Effects of resonant LO phonon assisted excitation on the photoluminescence spectra of InGaN/GaN quantum wells

P Dawson, N P Hylton, M J Kappers, C McAleese, C J Hurnphreys, T Palacios (Editor), D Jena (Editor), Akzo Nobel High Pur Metalorgan Hass Elect Mat Llc (Editor), I Q E Nitronex Rfmd Seoul Semicond Co Ltd Sony Corp Toyoda Cree Inc (Editor), Kopin Corp Mitsubishi Chem Corp Nichia Corp Taiyo Gosei Co Ltd (Editor), Veeco Instruments Air Prod Nippon Sanso Corp (Editor), Osram Opto Chem (Editor), Safc Hitech Semicond GmbH (Editor)

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have observed oscillations in the low temperature (T <50 K) photoluminescence excitation spectra of an InGaN/GaN single quantum well at photon energies above the GaN band-gap. We attribute the features in the spectra to excitation of electrons at multiples of the LO phonon energy above the GaN conduction band edge. The rapid cooling of these electrons; to the GaN conduction band edge and their subsequent capture leads to a, shift, in the photolumineseence, spectrum and hence-the oscillations in photoluminescence. We interpret the shift in the spectrum as being due to a modification of the occupation of the distribution of localization centres by electrons. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Original languageEnglish
    Title of host publication7th International Conference on Nitride Semiconductors (ICNS-7)
    EditorsT Palacios, D Jena, Akzo Nobel High Pur Metalorgan Hass Elect Mat Llc, I Q E Nitronex Rfmd Seoul Semicond Co Ltd Sony Corp Toyoda Cree Inc, Kopin Corp Mitsubishi Chem Corp Nichia Corp Taiyo Gosei Co Ltd, Veeco Instruments Air Prod Nippon Sanso Corp, Osram Opto Chem, Safc Hitech Semicond GmbH
    PublisherJohn Wiley & Sons Ltd
    Pages2270-2273
    Number of pages4
    Volume5
    ISBN (Print)1610-1634
    Publication statusPublished - 2007
    Event7th International Conference on Nitride Semiconductors (ICNS-7) - Las Vegas, NV
    Duration: 16 Sept 200721 Sept 2007

    Conference

    Conference7th International Conference on Nitride Semiconductors (ICNS-7)
    CityLas Vegas, NV
    Period16/09/0721/09/07

    Keywords

    • Materials Science, Coatings & Films
    • Physics, Condensed Matter

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