Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Lulu Du; He Li; Linlong Yan; Jiawei Zhang; Qian Xin; Qingpu Wang; Aimin Song

doi:10.1063/1.4973693

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

Lulu Du, He Li, Linlong Yan, Jiawei Zhang, Qian Xin, Qingpu Wang, Aimin Song

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Abstract

By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 107, a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

Original language	English
Article number	011602
Journal	Applied Physics Letters
Volume	110
Early online date	4 Jan 2017
DOIs	https://doi.org/10.1063/1.4973693
Publication status	Published - 6 Jan 2017

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title = "Effects of substrate and anode metal annealing on InGaZnO Schottky diodes",

abstract = "By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 107, a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.",

author = "Lulu Du and He Li and Linlong Yan and Jiawei Zhang and {Qian Xin} and {Qingpu Wang} and Aimin Song",

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doi = "10.1063/1.4973693",

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T1 - Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

AU - Du, Lulu

AU - Li, He

AU - Yan, Linlong

AU - Zhang, Jiawei

AU - Qian Xin,

AU - Qingpu Wang,

AU - Song, Aimin

PY - 2017/1/6

Y1 - 2017/1/6

N2 - By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 107, a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

AB - By studying different annealing effects of substrate and anode metal, high-performance Schottky diodes based on InGaZnO (IGZO) film have been realized. It is observed that a suitable thermal annealing of the SiO2/Si substrate significantly improves the diode performance. On the contrary, annealing of the Pd anode increases surface roughness, leading to degradation in the diode performance. As such, by only annealing the substrate but not the anode, we are able to achieve an extremely high rectification ratio of 7.2 × 107, a large barrier height of 0.88 eV, and a near unity ideality factor of 1.09. The diodes exhibit the highest performance amongst IGZO-based Schottky diodes reported to date where IGZO layer is not annealed. The capacitance vs. voltage measurements indicate that the surface roughness is correlated with the trap state density at the Schottky interface.

U2 - 10.1063/1.4973693

DO - 10.1063/1.4973693

M3 - Article

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

M1 - 011602

ER -

Effects of substrate and anode metal annealing on InGaZnO Schottky diodes

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