Electric-field dependence of electron emission from InAs/GaAs quantum dots

S. W. Lin; A. M. Song; A. R. Peaker

doi:10.1063/1.3295415

Electric-field dependence of electron emission from InAs/GaAs quantum dots

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

We study the electric-field dependence of electron emission from InAs/GaAs quantum dots in a low-temperature range 30-100 K. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the "effective emission rate" according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the emission voltage increases. © 2009 American Institute of Physics.

Original language	English
Title of host publication	AIP Conference Proceedings\|AIP Conf. Proc.
Place of Publication	USA
Publisher	American Institute of Physics
Pages	291-292
Number of pages	1
Volume	1199
ISBN (Print)	9780735407367
DOIs	https://doi.org/10.1063/1.3295415
Publication status	Published - 2009
Event	29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro Duration: 1 Jul 2009 → …

Conference

Conference	29th International Conference on Physics of Semiconductors, ICPS 29
City	Rio de Janeiro
Period	1/07/09 → …

Keywords

Electric field
Electron emission
Quantum dots

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10.1063/1.3295415

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@inproceedings{67e6f70b4332436eb866461b3a40942e,

title = "Electric-field dependence of electron emission from InAs/GaAs quantum dots",

abstract = "We study the electric-field dependence of electron emission from InAs/GaAs quantum dots in a low-temperature range 30-100 K. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the {"}effective emission rate{"} according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the emission voltage increases. {\textcopyright} 2009 American Institute of Physics.",

keywords = "Electric field, Electron emission, Quantum dots",

author = "Lin, {S. W.} and Song, {A. M.} and Peaker, {A. R.}",

year = "2009",

doi = "10.1063/1.3295415",

language = "English",

isbn = "9780735407367",

volume = "1199",

pages = "291--292",

booktitle = "AIP Conference Proceedings|AIP Conf. Proc.",

publisher = "American Institute of Physics",

address = "United States",

note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 01-07-2009",

}

TY - GEN

T1 - Electric-field dependence of electron emission from InAs/GaAs quantum dots

AU - Lin, S. W.

AU - Song, A. M.

AU - Peaker, A. R.

PY - 2009

Y1 - 2009

N2 - We study the electric-field dependence of electron emission from InAs/GaAs quantum dots in a low-temperature range 30-100 K. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the "effective emission rate" according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the emission voltage increases. © 2009 American Institute of Physics.

AB - We study the electric-field dependence of electron emission from InAs/GaAs quantum dots in a low-temperature range 30-100 K. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the "effective emission rate" according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the emission voltage increases. © 2009 American Institute of Physics.

KW - Electric field

KW - Electron emission

KW - Quantum dots

U2 - 10.1063/1.3295415

DO - 10.1063/1.3295415

M3 - Conference contribution

SN - 9780735407367

VL - 1199

SP - 291

EP - 292

BT - AIP Conference Proceedings|AIP Conf. Proc.

PB - American Institute of Physics

CY - USA

T2 - 29th International Conference on Physics of Semiconductors, ICPS 29

Y2 - 1 July 2009

ER -

Electric-field dependence of electron emission from InAs/GaAs quantum dots

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