Electric-field dependence of electron emission from InAs/GaAs quantum dots

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    Abstract

    We study the electric-field dependence of electron emission from InAs/GaAs quantum dots in a low-temperature range 30-100 K. A theoretical treatment for electron thermal and tunneling emissions from quantum dots is performed to achieve the "effective emission rate" according to the experimentally obtained quantities. The dominant emission mechanism is found to vary as the emission voltage increases. © 2009 American Institute of Physics.
    Original languageEnglish
    Title of host publicationAIP Conference Proceedings|AIP Conf. Proc.
    Place of PublicationUSA
    PublisherAmerican Institute of Physics
    Pages291-292
    Number of pages1
    Volume1199
    ISBN (Print)9780735407367
    DOIs
    Publication statusPublished - 2009
    Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro
    Duration: 1 Jul 2009 → …

    Conference

    Conference29th International Conference on Physics of Semiconductors, ICPS 29
    CityRio de Janeiro
    Period1/07/09 → …

    Keywords

    • Electric field
    • Electron emission
    • Quantum dots

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