Electric field in atomically thin carbon films

K. S. Novoselov; A. K. Geim; S. V. Morozov; D. Jiang; Y. Zhang; S. V. Dubonos; I. V. Grigorieva; A. A. Firsov

doi:10.1126/science.1102896

Electric field in atomically thin carbon films

K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov

Research output: Contribution to journal › Article › peer-review

Abstract

We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼ 10,000 square centimeters per volt-second can be induced by applying gate voltage.

Original language	English
Pages (from-to)	666-669
Number of pages	3
Journal	Science
Volume	306
Issue number	5696
DOIs	https://doi.org/10.1126/science.1102896
Publication status	Published - 22 Oct 2004

Keywords

Conduction band; Electric field effects; Electric resistance; Electron mobility; Gate potential; Hall effect; Hole mobility; Shubnikov-de Haas effect; Valence band (elec. field effects on transport in at. carbon films)

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10.1126/science.1102896

Communicating Physics through the Royal Society
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Impact: Economic, Technological, Attitudes and behaviours, Awareness and understanding
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Konstantin Novoselov (Participant), Andre Geim (Participant), Cinzia Casiraghi (Participant), Ursel Bangert (Participant) & Rahul Raveendran Nair (Participant)
Impact: Economic, Policy
Product enhancement by graphene
Konstantin Novoselov (Participant), Andre Geim (Participant) & Aravind Vijayaraghavan (Participant)
Impact: Economic, Policy, Technological

Cite this

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title = "Electric field in atomically thin carbon films",

abstract = "We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼ 10,000 square centimeters per volt-second can be induced by applying gate voltage.",

keywords = "Conduction band; Electric field effects; Electric resistance; Electron mobility; Gate potential; Hall effect; Hole mobility; Shubnikov-de Haas effect; Valence band (elec. field effects on transport in at. carbon films)",

author = "Novoselov, {K. S.} and Geim, {A. K.} and Morozov, {S. V.} and D. Jiang and Y. Zhang and Dubonos, {S. V.} and Grigorieva, {I. V.} and Firsov, {A. A.}",

year = "2004",

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doi = "10.1126/science.1102896",

language = "English",

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T1 - Electric field in atomically thin carbon films

AU - Novoselov, K. S.

AU - Geim, A. K.

AU - Morozov, S. V.

AU - Jiang, D.

AU - Zhang, Y.

AU - Dubonos, S. V.

AU - Grigorieva, I. V.

AU - Firsov, A. A.

PY - 2004/10/22

Y1 - 2004/10/22

N2 - We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼ 10,000 square centimeters per volt-second can be induced by applying gate voltage.

AB - We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼ 10,000 square centimeters per volt-second can be induced by applying gate voltage.

KW - Conduction band; Electric field effects; Electric resistance; Electron mobility; Gate potential; Hall effect; Hole mobility; Shubnikov-de Haas effect; Valence band (elec. field effects on transport in at. carbon films)

U2 - 10.1126/science.1102896

DO - 10.1126/science.1102896

M3 - Article

VL - 306

SP - 666

EP - 669

JO - Science

JF - Science

SN - 0036-8075

IS - 5696

ER -

Electric field in atomically thin carbon films

Abstract

Keywords

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Impacts

Communicating Physics through the Royal Society

Influence on graphene policy and global market growth

Product enhancement by graphene

Cite this