Electrical activity of the Pt H2 complex in silicon: high-resolution Laplace deep-level transient spectroscopy and uniaxial-stress technique

High-resolution Laplace deep-level spectroscopy combined with the uniaxial stress technique has been used to study stress-energy piezospectroscopic tensor components of the platinum-dihydrogen complex in silicon. The effect of stress on the defect has been observed either as the stress-induced Laplace deep-level transient spectroscopy peak splitting (which is interpreted as an effect of stress on the defect ionization process) or as a stress-induced defect alignment. The latter has been observed for both defect charge states, i.e., singly and doubly negative. The kinetics of the alignment process allowed us to conclude that the energy barrier separating equivalent defect configurations is 1 eV, which means that the complex does not reorient below the room temperature. The character of the lattice relaxation derived from the piezospectroscopic characteristics of the complex suggests that in Pt H2 the hydrogen atoms are not directly bonded to platinum.