Electrical and Optical Defect Evaluation Techniques for Electronic and Solar Grade Silicon

Anthony Peaker, Vladimir Markevich

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

    Abstract

    We review techniques which characterize and quantify the properties of defects and impurities in silicon materials and devices in terms of their effect on free carriers and their recombination- generation behavior. In particular we explore the application of Deep Level Transient Spectroscopy (DLTS) and its many variants to electronic and solar grade silicon. The physics of carrier recombination at deep level defects is presented and the various methodologies to measure defect parameters related to Shockley-Read-Hall generation-recombination kinetics are discussed. The use of high resolution Laplace DLTS is presented and techniques for determining characteristics of minority carrier traps are explained. Methods to measure minority carrier lifetime and relate these measurements to the defect concentrations and properties are considered. Optical measurements to study defects are presented including optical absorption, Raman techniques and photo-luminescence. The status and limitations of such techniques for qualification of silicon material are discussed.
    Original languageEnglish
    Title of host publicationDefects and Impurities in Silicon Materials
    Subtitle of host publicationLecture Notes in Physics
    EditorsYutaka Yoshida, Guido Langouche
    Place of PublicationJapan
    PublisherSpringer Nature
    Pages129-180
    Number of pages51
    Volume916
    ISBN (Electronic)978-4-431-55800-2
    ISBN (Print)978-4-431-55799-9
    Publication statusPublished - Dec 2015

    Publication series

    NameLecture Notes in Physics

    Research Beacons, Institutes and Platforms

    • Photon Science Institute

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