Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

A. R. Peaker, U. Kaufmann, Wang Zhan-Guo Wang, R. Worner, B. Hamilton, H. G. Grimmeiss

Research output: Contribution to journalArticlepeer-review

Abstract

Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni3+ (3d7) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni3+ to Ni2+ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni2+ is 1.3*10-16 cm2 at 240K.

Original languageEnglish
Article number016
Pages (from-to)6161-6167
Number of pages7
JournalJournal of Physics C: Solid State Physics
Volume17
Issue number34
DOIs
Publication statusPublished - 1984

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