Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

A. R. Peaker; U. Kaufmann; Wang Zhan-Guo Wang; R. Worner; B. Hamilton; H. G. Grimmeiss

doi:10.1088/0022-3719/17/34/016

Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

A. R. Peaker^*, U. Kaufmann, Wang Zhan-Guo Wang, R. Worner, B. Hamilton, H. G. Grimmeiss

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni³⁺ (3d⁷) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni³⁺ to Ni²⁺ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni²⁺ is 1.3*10^-16 cm² at 240K.

Original language	English
Article number	016
Pages (from-to)	6161-6167
Number of pages	7
Journal	Journal of Physics C: Solid State Physics
Volume	17
Issue number	34
DOIs	https://doi.org/10.1088/0022-3719/17/34/016
Publication status	Published - 1984

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title = "Electrical and optical properties of the neutral nickel acceptor in gallium phosphide",

abstract = "Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni3+ (3d7) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni3+ to Ni2+ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni2+ is 1.3*10-16 cm2 at 240K.",

author = "Peaker, {A. R.} and U. Kaufmann and {Zhan-Guo Wang}, Wang and R. Worner and B. Hamilton and Grimmeiss, {H. G.}",

year = "1984",

doi = "10.1088/0022-3719/17/34/016",

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T1 - Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

AU - Peaker, A. R.

AU - Kaufmann, U.

AU - Zhan-Guo Wang, Wang

AU - Worner, R.

AU - Hamilton, B.

AU - Grimmeiss, H. G.

PY - 1984

Y1 - 1984

N2 - Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni3+ (3d7) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni3+ to Ni2+ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni2+ is 1.3*10-16 cm2 at 240K.

AB - Concentration measurements using the electron paramagnetic resonance (EPR) signature of the Ni3+ (3d7) state in GaP have been compared with thermal emission and photocapacitance data measured on the same samples. These data combined with EPR photo-quenching measurements provide a definitive assignment of a state with a thermal activation energy for hole emission of 510 meV to the Ni3+ to Ni2+ transition. The optical threshold for the same transition is 520 meV and the cross section for thermal capture of a hole into Ni2+ is 1.3*10-16 cm2 at 240K.

UR - http://www.scopus.com/inward/record.url?scp=2842581727&partnerID=8YFLogxK

U2 - 10.1088/0022-3719/17/34/016

DO - 10.1088/0022-3719/17/34/016

M3 - Article

AN - SCOPUS:2842581727

SN - 0022-3719

VL - 17

SP - 6161

EP - 6167

JO - Journal of Physics C: Solid State Physics

JF - Journal of Physics C: Solid State Physics

IS - 34

M1 - 016

ER -

Electrical and optical properties of the neutral nickel acceptor in gallium phosphide

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