Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices

S. Banerjee; K. A. Shore; C. J. Mitchell; J. L. Sly; M. Missous

Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices

S. Banerjee^*, K. A. Shore, C. J. Mitchell, J. L. Sly, M. Missous

^*Corresponding author for this work

Bangor University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.

Original language	English
Pages (from-to)	719-720
Number of pages	2
Journal	Trends in Optics and Photonics Series
Volume	96 A
Issue number	2004
Publication status	Published - 1 Jan 2004
Event	Conference on Lasers and Electro-Optics, CLEO - Washington, DC, United States Duration: 17 May 2004 → 19 May 2004

Cite this

@article{64cf0bd90f134649af5ce2b04c3e1bf9,

title = "Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices",

abstract = "Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.",

author = "S. Banerjee and Shore, {K. A.} and Mitchell, {C. J.} and Sly, {J. L.} and M. Missous",

year = "2004",

month = jan,

day = "1",

language = "English",

volume = "96 A",

pages = "719--720",

journal = "Trends in Optics and Photonics Series",

issn = "1094-5695",

publisher = "Optical Society of America",

number = "2004",

note = "Conference on Lasers and Electro-Optics, CLEO ; Conference date: 17-05-2004 Through 19-05-2004",

}

TY - JOUR

T1 - Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices

AU - Banerjee, S.

AU - Shore, K. A.

AU - Mitchell, C. J.

AU - Sly, J. L.

AU - Missous, M.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.

AB - Growth of electroluminescent devices operating at 2μm based on quantum cascade (QC) design of strain-compensated InxGal xAs/InyAl1-yAs has been undertaken. Experimentally measured current- voltage characteristics are in good agreement with theoretical predictions.

UR - http://www.scopus.com/inward/record.url?scp=33645232514&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:33645232514

SN - 1094-5695

VL - 96 A

SP - 719

EP - 720

JO - Trends in Optics and Photonics Series

JF - Trends in Optics and Photonics Series

IS - 2004

T2 - Conference on Lasers and Electro-Optics, CLEO

Y2 - 17 May 2004 through 19 May 2004

ER -

Electrical characteristics of highly strained InGaAs/ InAIAs 2μm quantum cascade light -emitting devices

Abstract

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