Electrical characterization of mica as an insulator for organic field-effect transistors

X. F. Lu; L. A. Majewski; A. M. Song

doi:10.1016/j.orgel.2008.02.007

Electrical characterization of mica as an insulator for organic field-effect transistors

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties of conjugated polymer films, including poly(3-hexylthiophene)-2,5-diyl (P3HT), poly(3,3‴-didodecylquarterthiophene) (PQT-12), and poly(triarylamine) (PTAA), on mica substrates have been studied. The test structure was similar to a standard organic field-effect transistor but with a 150-μm-thick commercially available mica gate insulator/substrate, which allowed to obtain a field-effect mobility of P3HT as high as 0.08 cm2/Vs in the linear regime in ambient air. The influence of interface treatment, thermal annealing, and measurement conditions on the electrical properties of the P3HT films has been characterized and analyzed. We also studied the time dependence of the carrier concentration and mobility before and after a thermal annealing process. The results indicate that mica is a promising insulator for organic field-effect transistors, apart from already being one of the common thin-film materials widely used in electric capacitors. © 2008 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	473-480
Number of pages	7
Journal	Organic Electronics: physics, materials, applications
Volume	9
Issue number	4
DOIs	https://doi.org/10.1016/j.orgel.2008.02.007
Publication status	Published - Aug 2008

Keywords

Conducting polymer
Gate dielectric
Mica
Mobility
Organic field-effect transistor
Substrate

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10.1016/j.orgel.2008.02.007

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title = "Electrical characterization of mica as an insulator for organic field-effect transistors",

abstract = "Electrical properties of conjugated polymer films, including poly(3-hexylthiophene)-2,5-diyl (P3HT), poly(3,3‴-didodecylquarterthiophene) (PQT-12), and poly(triarylamine) (PTAA), on mica substrates have been studied. The test structure was similar to a standard organic field-effect transistor but with a 150-μm-thick commercially available mica gate insulator/substrate, which allowed to obtain a field-effect mobility of P3HT as high as 0.08 cm2/Vs in the linear regime in ambient air. The influence of interface treatment, thermal annealing, and measurement conditions on the electrical properties of the P3HT films has been characterized and analyzed. We also studied the time dependence of the carrier concentration and mobility before and after a thermal annealing process. The results indicate that mica is a promising insulator for organic field-effect transistors, apart from already being one of the common thin-film materials widely used in electric capacitors. {\textcopyright} 2008 Elsevier B.V. All rights reserved.",

keywords = "Conducting polymer, Gate dielectric, Mica, Mobility, Organic field-effect transistor, Substrate",

author = "Lu, {X. F.} and Majewski, {L. A.} and Song, {A. M.}",

year = "2008",

month = aug,

doi = "10.1016/j.orgel.2008.02.007",

language = "English",

volume = "9",

pages = "473--480",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - Electrical characterization of mica as an insulator for organic field-effect transistors

AU - Lu, X. F.

AU - Majewski, L. A.

AU - Song, A. M.

PY - 2008/8

Y1 - 2008/8

N2 - Electrical properties of conjugated polymer films, including poly(3-hexylthiophene)-2,5-diyl (P3HT), poly(3,3‴-didodecylquarterthiophene) (PQT-12), and poly(triarylamine) (PTAA), on mica substrates have been studied. The test structure was similar to a standard organic field-effect transistor but with a 150-μm-thick commercially available mica gate insulator/substrate, which allowed to obtain a field-effect mobility of P3HT as high as 0.08 cm2/Vs in the linear regime in ambient air. The influence of interface treatment, thermal annealing, and measurement conditions on the electrical properties of the P3HT films has been characterized and analyzed. We also studied the time dependence of the carrier concentration and mobility before and after a thermal annealing process. The results indicate that mica is a promising insulator for organic field-effect transistors, apart from already being one of the common thin-film materials widely used in electric capacitors. © 2008 Elsevier B.V. All rights reserved.

AB - Electrical properties of conjugated polymer films, including poly(3-hexylthiophene)-2,5-diyl (P3HT), poly(3,3‴-didodecylquarterthiophene) (PQT-12), and poly(triarylamine) (PTAA), on mica substrates have been studied. The test structure was similar to a standard organic field-effect transistor but with a 150-μm-thick commercially available mica gate insulator/substrate, which allowed to obtain a field-effect mobility of P3HT as high as 0.08 cm2/Vs in the linear regime in ambient air. The influence of interface treatment, thermal annealing, and measurement conditions on the electrical properties of the P3HT films has been characterized and analyzed. We also studied the time dependence of the carrier concentration and mobility before and after a thermal annealing process. The results indicate that mica is a promising insulator for organic field-effect transistors, apart from already being one of the common thin-film materials widely used in electric capacitors. © 2008 Elsevier B.V. All rights reserved.

KW - Conducting polymer

KW - Gate dielectric

KW - Mica

KW - Mobility

KW - Organic field-effect transistor

KW - Substrate

U2 - 10.1016/j.orgel.2008.02.007

DO - 10.1016/j.orgel.2008.02.007

M3 - Article

SN - 1566-1199

VL - 9

SP - 473

EP - 480

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 4

ER -

Electrical characterization of mica as an insulator for organic field-effect transistors

Abstract

Keywords

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