Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices

M. A. Lourenço; T. M. Butler; A. K. Kewell; R. M. Gwilliam; K. J. Kirkby; K. P. Homewood

doi:10.1016/S0168-583X(00)00663-7

Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices

M. A. Lourenço^*, T. M. Butler, A. K. Kewell, R. M. Gwilliam, K. J. Kirkby, K. P. Homewood

^*Corresponding author for this work

Division of Cancer Sciences (L5)

University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

β-FeSi₂/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of 1.5 μm. We report here on a study of the electrical, electronic and optical properties of devices produced by Fe implantation into epitaxial silicon layers. The devices have been characterised by current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and electroluminescence (EL) measurements. DLTS showed the presence of a majority carrier trapping centre, with an activation energy of 200 ± 25 meV. Room temperature EL was observed from β-FeSi₂/Si LEDs. Preliminary analysis of the EL results suggests its quench ratio depends on device structure; the quenching is thought to be related to surface recombination.

Original language	English
Pages (from-to)	159-163
Number of pages	5
Journal	Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	175-177
DOIs	https://doi.org/10.1016/S0168-583X(00)00663-7
Publication status	Published - Apr 2001

Keywords

Band offset
Deep level transient spectroscopy
Electroluminescence
Iron disilicide
Light emitting device

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10.1016/S0168-583X(00)00663-7

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Lourenço, M. A., Butler, T. M., Kewell, A. K., Gwilliam, R. M., Kirkby, K. J., & Homewood, K. P. (2001). Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices. Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 175-177, 159-163. https://doi.org/10.1016/S0168-583X(00)00663-7

@article{b339223e51574f5b88aed6a64bc0affb,

title = "Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices",

abstract = "β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of 1.5 μm. We report here on a study of the electrical, electronic and optical properties of devices produced by Fe implantation into epitaxial silicon layers. The devices have been characterised by current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and electroluminescence (EL) measurements. DLTS showed the presence of a majority carrier trapping centre, with an activation energy of 200 ± 25 meV. Room temperature EL was observed from β-FeSi2/Si LEDs. Preliminary analysis of the EL results suggests its quench ratio depends on device structure; the quenching is thought to be related to surface recombination.",

keywords = "Band offset, Deep level transient spectroscopy, Electroluminescence, Iron disilicide, Light emitting device",

author = "Louren{\c c}o, \{M. A.\} and Butler, \{T. M.\} and Kewell, \{A. K.\} and Gwilliam, \{R. M.\} and Kirkby, \{K. J.\} and Homewood, \{K. P.\}",

year = "2001",

month = apr,

doi = "10.1016/S0168-583X(00)00663-7",

language = "English",

volume = "175-177",

pages = "159--163",

journal = "Nuclear Instruments \& Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier BV",

}

Lourenço, MA, Butler, TM, Kewell, AK, Gwilliam, RM, Kirkby, KJ & Homewood, KP 2001, 'Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices', Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, vol. 175-177, pp. 159-163. https://doi.org/10.1016/S0168-583X(00)00663-7

Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices. / Lourenço, M. A.; Butler, T. M.; Kewell, A. K. et al.
In: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 175-177, 04.2001, p. 159-163.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices

AU - Lourenço, M. A.

AU - Butler, T. M.

AU - Kewell, A. K.

AU - Gwilliam, R. M.

AU - Kirkby, K. J.

AU - Homewood, K. P.

PY - 2001/4

Y1 - 2001/4

N2 - β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of 1.5 μm. We report here on a study of the electrical, electronic and optical properties of devices produced by Fe implantation into epitaxial silicon layers. The devices have been characterised by current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and electroluminescence (EL) measurements. DLTS showed the presence of a majority carrier trapping centre, with an activation energy of 200 ± 25 meV. Room temperature EL was observed from β-FeSi2/Si LEDs. Preliminary analysis of the EL results suggests its quench ratio depends on device structure; the quenching is thought to be related to surface recombination.

AB - β-FeSi2/Si light emitting devices (LEDs) have been attracting great interest since the first successful demonstration of an ion beam synthesised (IBS) device operating at a wavelength of 1.5 μm. We report here on a study of the electrical, electronic and optical properties of devices produced by Fe implantation into epitaxial silicon layers. The devices have been characterised by current-voltage (I-V), capacitance-voltage (C-V), deep level transient spectroscopy (DLTS) and electroluminescence (EL) measurements. DLTS showed the presence of a majority carrier trapping centre, with an activation energy of 200 ± 25 meV. Room temperature EL was observed from β-FeSi2/Si LEDs. Preliminary analysis of the EL results suggests its quench ratio depends on device structure; the quenching is thought to be related to surface recombination.

KW - Band offset

KW - Deep level transient spectroscopy

KW - Electroluminescence

KW - Iron disilicide

KW - Light emitting device

UR - https://www.scopus.com/pages/publications/17044451223

U2 - 10.1016/S0168-583X(00)00663-7

DO - 10.1016/S0168-583X(00)00663-7

M3 - Article

AN - SCOPUS:17044451223

SN - 0168-583X

VL - 175-177

SP - 159

EP - 163

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

ER -

Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices

Abstract

Keywords

UN SDGs

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