Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe + ions

V. T. Vo; K. L. Koon; Z. R. Hu; C. N. Dharmasiri; S. C. Subramaniam; A. A. Rezazadeh

doi:10.1063/1.1712030

Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe + ions

V. T. Vo, K. L. Koon, Z. R. Hu, C. N. Dharmasiri, S. C. Subramaniam, A. A. Rezazadeh

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Abstract

The thermal stability, electrical isolation and rf loss in a multilayer GaAs planar doped barrier diode structure were discussed. The structure was bombarded by Fe+ and H+ ions. A sheet resistivity as high as 3×108ω/sq and thermal stability up to 400°C were achieved, for an H+ bombardment with a dose of 1×10 15 cm-2. For samples bombarded by Fe+ ions, a similar high sheet resistivity was achieved although a higher annealing temperature and a longer annealing time were needed.

Original language	English
Pages (from-to)	3073-3075
Number of pages	2
Journal	Applied Physics Letters
Volume	84
Issue number	16
DOIs	https://doi.org/10.1063/1.1712030
Publication status	Published - 19 Apr 2004

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10.1063/1.1712030

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title = "Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe + ions",

abstract = "The thermal stability, electrical isolation and rf loss in a multilayer GaAs planar doped barrier diode structure were discussed. The structure was bombarded by Fe+ and H+ ions. A sheet resistivity as high as 3×108ω/sq and thermal stability up to 400°C were achieved, for an H+ bombardment with a dose of 1×10 15 cm-2. For samples bombarded by Fe+ ions, a similar high sheet resistivity was achieved although a higher annealing temperature and a longer annealing time were needed.",

author = "Vo, {V. T.} and Koon, {K. L.} and Hu, {Z. R.} and Dharmasiri, {C. N.} and Subramaniam, {S. C.} and Rezazadeh, {A. A.}",

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T1 - Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe + ions

AU - Vo, V. T.

AU - Koon, K. L.

AU - Hu, Z. R.

AU - Dharmasiri, C. N.

AU - Subramaniam, S. C.

AU - Rezazadeh, A. A.

PY - 2004/4/19

Y1 - 2004/4/19

N2 - The thermal stability, electrical isolation and rf loss in a multilayer GaAs planar doped barrier diode structure were discussed. The structure was bombarded by Fe+ and H+ ions. A sheet resistivity as high as 3×108ω/sq and thermal stability up to 400°C were achieved, for an H+ bombardment with a dose of 1×10 15 cm-2. For samples bombarded by Fe+ ions, a similar high sheet resistivity was achieved although a higher annealing temperature and a longer annealing time were needed.

AB - The thermal stability, electrical isolation and rf loss in a multilayer GaAs planar doped barrier diode structure were discussed. The structure was bombarded by Fe+ and H+ ions. A sheet resistivity as high as 3×108ω/sq and thermal stability up to 400°C were achieved, for an H+ bombardment with a dose of 1×10 15 cm-2. For samples bombarded by Fe+ ions, a similar high sheet resistivity was achieved although a higher annealing temperature and a longer annealing time were needed.

U2 - 10.1063/1.1712030

DO - 10.1063/1.1712030

M3 - Article

SN - 0003-6951

VL - 84

SP - 3073

EP - 3075

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe + ions

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