Electrical phase change of Ga: La:S:Cu films

R. E. Simpson; A. Mairaj; R. J. Curry; C. C. Huang; K. Knight; N. Sessions; M. Hassan; Daniel W. Hewak

doi:10.1049/el:20071290

Electrical phase change of Ga: La:S:Cu films

R. E. Simpson, A. Mairaj, R. J. Curry, C. C. Huang, K. Knight, N. Sessions, M. Hassan, Daniel W. Hewak

Research output: Contribution to journal › Article › peer-review

Abstract

Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200Ωm in the amorphous state and 40Ωm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

Original language	English
Pages (from-to)	830-832
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	15
DOIs	https://doi.org/10.1049/el:20071290
Publication status	Published - 2007

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title = "Electrical phase change of Ga: La:S:Cu films",

abstract = "Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200Ωm in the amorphous state and 40Ωm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.",

author = "Simpson, {R. E.} and A. Mairaj and Curry, {R. J.} and Huang, {C. C.} and K. Knight and N. Sessions and M. Hassan and Hewak, {Daniel W.}",

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T2 - La:S:Cu films

AU - Simpson, R. E.

AU - Mairaj, A.

AU - Curry, R. J.

AU - Huang, C. C.

AU - Knight, K.

AU - Sessions, N.

AU - Hassan, M.

AU - Hewak, Daniel W.

PY - 2007

Y1 - 2007

N2 - Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200Ωm in the amorphous state and 40Ωm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

AB - Ga:La:S:Cu films have been prepared by sputter deposition. Amorphous thin films were fabricated with Cu concentrations as high as 66 at.. The electrical phase change properties of these films have been investigated. The electrical resistivity of these materials is 200Ωm in the amorphous state and 40Ωm in the crystalline state. The crystallisation time was measured using an optical pump probe method and confirmed to be 150ns. The high resistivity of these films in both their crystalline and amorphous states allows low current, Joule, heating and therefore shows potential for the utilisation as the active layer in electrical phase change memory devices.

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SP - 830

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JO - Electronics Letters

JF - Electronics Letters

IS - 15

ER -

Electrical phase change of Ga: La:S:Cu films

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