Electrical techniques for the measurement of deep states

When point defects, either intrinsic (such as vacancies or interstitials) or extrinsic (most impurities with the exception of shallow donors or acceptors) are introduced into a semiconductor, they can result in the occurrence of 'deep states'. These are electronic levels that are not normally ionized at room temperature, but can affect both carrier concentrations and minority carrier lifetime. The purpose of this review is to provide an outline of the techniques that are commonly used to characterize deep defect states in terms of their electrical properties.