Electrically active defects induced by hydrogen and helium implantations in Ge

V. P. Markevich; S. Bernardini; I. D. Hawkins; A. R. Peaker; Vl Kolkovsky; A. Nylandsted Larsen; L. Dobaczewski

doi:10.1016/j.mssp.2008.09.007

Electrically active defects induced by hydrogen and helium implantations in Ge

V. P. Markevich, S. Bernardini, I. D. Hawkins, A. R. Peaker, Vl Kolkovsky, A. Nylandsted Larsen, L. Dobaczewski

Research output: Contribution to journal › Article › peer-review

Abstract

Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010-1×1014 cm-2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50-350 °C have also been studied. The results have been obtained by means of capacitance-voltage (C-V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (

Original language	English
Pages (from-to)	354-359
Number of pages	5
Journal	Materials science in semiconductor processing
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.mssp.2008.09.007
Publication status	Published - Oct 2008

Keywords

Concentration profiles
Defects
DLTS
Germanium
Hydrogen
Ion implantation

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10.1016/j.mssp.2008.09.007

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title = "Electrically active defects induced by hydrogen and helium implantations in Ge",

abstract = "Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010-1×1014 cm-2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50-350 °C have also been studied. The results have been obtained by means of capacitance-voltage (C-V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (",

keywords = "Concentration profiles, Defects, DLTS, Germanium, Hydrogen, Ion implantation",

author = "Markevich, {V. P.} and S. Bernardini and Hawkins, {I. D.} and Peaker, {A. R.} and Vl Kolkovsky and {Nylandsted Larsen}, A. and L. Dobaczewski",

year = "2008",

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doi = "10.1016/j.mssp.2008.09.007",

language = "English",

volume = "11",

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journal = "Materials science in semiconductor processing",

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TY - JOUR

T1 - Electrically active defects induced by hydrogen and helium implantations in Ge

AU - Markevich, V. P.

AU - Bernardini, S.

AU - Hawkins, I. D.

AU - Peaker, A. R.

AU - Kolkovsky, Vl

AU - Nylandsted Larsen, A.

AU - Dobaczewski, L.

PY - 2008/10

Y1 - 2008/10

N2 - Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010-1×1014 cm-2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50-350 °C have also been studied. The results have been obtained by means of capacitance-voltage (C-V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (

AB - Results of a study of electrically active defects induced in Sb-doped Ge crystals by implantations of hydrogen and helium ions (protons and alpha particles) with energies in the range from 500 keV to 1 MeV and doses in the range 1×1010-1×1014 cm-2 are presented in this work. Transformations of the defects upon post-implantation isochronal anneals in the temperature range 50-350 °C have also been studied. The results have been obtained by means of capacitance-voltage (C-V) measurements and deep-level transient spectroscopy (DLTS). It was found from an analysis of DLTS spectra that low doses (

KW - Concentration profiles

KW - Defects

KW - DLTS

KW - Germanium

KW - Hydrogen

KW - Ion implantation

U2 - 10.1016/j.mssp.2008.09.007

DO - 10.1016/j.mssp.2008.09.007

M3 - Article

SN - 1369-8001

VL - 11

SP - 354

EP - 359

JO - Materials science in semiconductor processing

JF - Materials science in semiconductor processing

IS - 5

ER -

Electrically active defects induced by hydrogen and helium implantations in Ge

Abstract

Keywords

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