Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen

The characterization of four electrically active defects generated during the fabrication of a Schottky contact by Deep Level Transient Spectroscopy on p-type molecular beam epitaxy (MBE)-grown silicon, was investigated. Using the sputtering process these point defects were produced, for depositing the titanium layer. H(0.23), the defect obtained in MBE-grown silicon, was identified as the donor level of the divacancy while other three defects were boron-related. The H(0.52) defect of MBE and Czochralski grown crystals, displayed a bell-shape distribution while other defects followed profiles decaying exponentially from the surface.