Electron-beam-induced direct etching of graphene

Cornelius Thiele, Alexandre Felten, Tim J. Echtermeyer, Andrea C. Ferrari, Cinzia Casiraghi, Hilbert V. Löhneysen, Ralph Krupke

    Research output: Contribution to journalArticlepeer-review


    We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.
    Original languageEnglish
    Pages (from-to)84-91
    Number of pages7
    Publication statusPublished - Nov 2013


    Dive into the research topics of 'Electron-beam-induced direct etching of graphene'. Together they form a unique fingerprint.

    Cite this