Abstract
We present electron-beam-induced oxidation of single- and bilayer graphene devices in a low-voltage scanning electron microscope. We show that the injection of oxygen leads to targeted etching at the focal point, enabling us to pattern graphene with a resolution of better than 20 nm. Voltage-contrast imaging, in conjunction with finite-element simulations, explain the secondary-electron intensities and correlate them to the etch profile. © 2013 Elsevier Ltd. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 84-91 |
| Number of pages | 7 |
| Journal | Carbon |
| Volume | 64 |
| DOIs | |
| Publication status | Published - Nov 2013 |