TY - JOUR
T1 - Electron Field Emission of Water-based Inkjet Printed Graphene Films
AU - Grillo, Alessandro
AU - Ahmad, Towseef
AU - Wang, Jingjing
AU - Pelella, Aniello
AU - Faella, Enver
AU - Capista, Daniele
AU - Passacantando, Maurizio
AU - Bartolomeo, Antonio Di
AU - Casiraghi, Cinzia
PY - 2025
Y1 - 2025
N2 - Solution-processed graphene is extremely attractive for the realization of large area and patterned graphene films for field emitting devices. Previous studies have focussed only on the use of reduced-graphene oxide, however solution-processed graphene can also be produced by other approaches, giving rise to nanosheets with different surface chemistry as well as lateral and thickness distributions. Here, we report the field emission characterization of films made of water-based graphene ink, prepared by liquid phase exfoliation, and inkjet printed with an area of 2.5 𝑚𝑚2 onto silicon (𝑆𝑖/𝑆𝑖𝑂2) substrates. These films show excellent field emission properties, comparable to those measured on single flakes and carbo nanotubes with the same setup, and they show a remarkably high maximum current density (up to ~ 723 𝐴/𝑐𝑚2), making them very attractive for field emission devices.
AB - Solution-processed graphene is extremely attractive for the realization of large area and patterned graphene films for field emitting devices. Previous studies have focussed only on the use of reduced-graphene oxide, however solution-processed graphene can also be produced by other approaches, giving rise to nanosheets with different surface chemistry as well as lateral and thickness distributions. Here, we report the field emission characterization of films made of water-based graphene ink, prepared by liquid phase exfoliation, and inkjet printed with an area of 2.5 𝑚𝑚2 onto silicon (𝑆𝑖/𝑆𝑖𝑂2) substrates. These films show excellent field emission properties, comparable to those measured on single flakes and carbo nanotubes with the same setup, and they show a remarkably high maximum current density (up to ~ 723 𝐴/𝑐𝑚2), making them very attractive for field emission devices.
M3 - Article
SN - 2516-0230
JO - Nanoscale Advances
JF - Nanoscale Advances
ER -