Electron paramagnetic resonance evaluation of defects at the (100)Si/Al2O3 interface

B J Jones, R C Barklie

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Electron paramagnetic resonance was conducted on aluminium oxide films deposited by atomic layer deposition on (100)Si. Multiplet spectra are observed, which can be consistently decomposed assuming the presence of only P b0 and Pb1 centres, which are well known in Si/SiO 2 structures. Al2O3 films deposited on HF-treated (100)Si exhibit unpassivated Pb0 and Pb1 centres, with concentrations of (7.7 ?? 1.0) ?? 1011 cm-2 and (8 ??3) ?? 1010 cm-2, respectively. Rapid thermal annealing of the substrate in NH3 prior to film deposition reduces the unpassivated Pb0 concentration to (4.5 ?? 0.7) ?? 1011 cm-2. Forming gas annealing at temperatures in the range 400-550??C causes no further reduction in defect density; this may be related to a spread in passivation activation energy, associated with low-temperature deposition. ?? 2005 IOP Publishing Ltd.
    Original languageEnglish
    Pages (from-to)1178-1181
    Number of pages4
    JournalJournal of Physics D: Applied Physics
    Volume38
    Issue number8
    DOIs
    Publication statusPublished - 2005

    Keywords

    • Activation energy
    • Alumina
    • Aluminum oxide films
    • Atomic layer deposition
    • Concentration (process)
    • Cryogenics
    • Defect density
    • Gas annealing
    • Paramagnetic resonance
    • Rapid thermal annealing
    • Thin films

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