Abstract
By using a two dimensional ensemble Monte-Carlo (2D EMC) method, the behavior of electrons transporting through asymmetric nano-wires, referred to as self-switching nano-diodes (SSDs), is studied. Our numerical results show that the diode-like characteristic is an intrinsic property of the geometric asymmetry in the nanometer scale and the surface states originated from the fabricating processes results in the presence of the threshold voltages. © Springer Science+Business Media LLC 2007.
Original language | English |
---|---|
Pages (from-to) | 59-62 |
Number of pages | 3 |
Journal | Journal of Computational Electronics |
Volume | 6 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - Sep 2007 |
Keywords
- Diode-like
- Geometric asymmetry
- Monte Carlo simulations
- Surface states
- Threshold voltage