Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

D. Watson-Parris; M. J. Godfrey; R. A. Oliver; P. Dawson; M. J. Galtrey; M. J. Kappers; C. J. Humphreys

doi:10.1002/pssc.200983516

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

D. Watson-Parris, M. J. Godfrey, R. A. Oliver, P. Dawson, M. J. Galtrey, M. J. Kappers, C. J. Humphreys

Research output: Contribution to journal › Article › peer-review

Abstract

Localisation lengths of the electrons and holes in In-GaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm.We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

Original language	English
Pages (from-to)	2255-2258
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.200983516
Publication status	Published - 2010

Keywords

Electron states
InGaN/GaN
Localization
Quantum wells

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10.1002/pssc.200983516

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title = "Energy landscape and carrier wave-functions in InGaN/GaN quantum wells",

abstract = "Localisation lengths of the electrons and holes in In-GaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schr{\"o}dinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm.We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. {\textcopyright} 2010 Wiley-VCH Verlag GmbH & Co. KGaA.",

keywords = "Electron states, InGaN/GaN, Localization, Quantum wells",

author = "D. Watson-Parris and Godfrey, {M. J.} and Oliver, {R. A.} and P. Dawson and Galtrey, {M. J.} and Kappers, {M. J.} and Humphreys, {C. J.}",

year = "2010",

doi = "10.1002/pssc.200983516",

language = "English",

volume = "7",

pages = "2255--2258",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "John Wiley & Sons Ltd",

number = "7-8",

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TY - JOUR

T1 - Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

AU - Watson-Parris, D.

AU - Godfrey, M. J.

AU - Oliver, R. A.

AU - Dawson, P.

AU - Galtrey, M. J.

AU - Kappers, M. J.

AU - Humphreys, C. J.

PY - 2010

Y1 - 2010

N2 - Localisation lengths of the electrons and holes in In-GaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm.We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

AB - Localisation lengths of the electrons and holes in In-GaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm.We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.

KW - Electron states

KW - InGaN/GaN

KW - Localization

KW - Quantum wells

U2 - 10.1002/pssc.200983516

DO - 10.1002/pssc.200983516

M3 - Article

SN - 1862-6351

VL - 7

SP - 2255

EP - 2258

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7-8

ER -

Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

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Keywords

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