Energy landscape and carrier wave-functions in InGaN/GaN quantum wells

D. Watson-Parris, M. J. Godfrey, R. A. Oliver, P. Dawson, M. J. Galtrey, M. J. Kappers, C. J. Humphreys

    Research output: Contribution to journalArticlepeer-review


    Localisation lengths of the electrons and holes in In-GaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schrödinger equation. We have treated the distribution of indium atoms as random and found that these fluctuations in alloy concentration alone can localise the carriers. While the holes are localised on a scale of approximately ∼1nm, the electrons are localised on scale of ∼7 nm.We have also considered the effect of well width fluctuations and found that they contribute to electron localisation. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
    Original languageEnglish
    Pages (from-to)2255-2258
    Number of pages3
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Issue number7-8
    Publication statusPublished - 2010


    • Electron states
    • InGaN/GaN
    • Localization
    • Quantum wells


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