Energy state distributions of the Pb centers at the (100), (110), and (111) SiSiO2 interfaces investigated by Laplace deep level transient spectroscopy

L. Dobaczewski, P. Kruszewski, S. Bernardini, P. K. Hurley, V. P. Markevich, I. D. Hawkins, A. R. Peaker

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Abstract

The energy distribution of the Pb centers at the SiSiO2 interface has been determined using isothermal laplace deep level transient spectroscopy. For the (111) and (110) interface orientations, the distributions are similar and centered at 0.38 eV below the silicon conduction band. This is consistent with only Pb0 states being present. For the (100) orientation, two types of the interface states are observed: one similar to the (111) and (110) orientations while the other has a negative- U character in which the emission rate versus surface potential dependence is qualitatively different from that observed for Pb0 and is presumed to be Pb1.

Original languageEnglish
Article number242104
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 30 Jun 2008

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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