Engineering semiconductor nanowires for photodetection: From visible to terahertz

Hannah J. Joyce; Jack Alexander-Webber; Kun  Peng; Michael B. Johnston; Patrick Parkinson; H. Hoe Tan; C. Jagadish

doi:10.1117/12.2320715

Engineering semiconductor nanowires for photodetection: From visible to terahertz

Hannah J. Joyce, Jack Alexander-Webber, Kun Peng, Michael B. Johnston, Patrick Parkinson, H. Hoe Tan, C. Jagadish

The University of Manchester

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.

Original language	English
Title of host publication	Optical Sensing, Imaging, and Photon Counting
Subtitle of host publication	From X-Rays to THz
Editors	Manijeh Razeghi, Oleg Mitrofanov, Jose Luis Pau Vizcaino, Chee Hing Tan
Publisher	SPIE
Volume	10729
ISBN (Electronic)	9781510620292
DOIs	https://doi.org/10.1117/12.2320715
Publication status	Published - 18 Sept 2018
Event	Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 - San Diego, United States Duration: 22 Aug 2018 → 23 Aug 2018

Conference

Conference	Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018
Country/Territory	United States
City	San Diego
Period	22/08/18 → 23/08/18

Keywords

III-V
Nanowire
photoresponse
semiconductor
terahertz

Access to Document

10.1117/12.2320715

Cite this

Joyce, H. J., Alexander-Webber, J., Peng, K., Johnston, M. B., Parkinson, P., Tan, H. H., & Jagadish, C. (2018). Engineering semiconductor nanowires for photodetection: From visible to terahertz. In M. Razeghi, O. Mitrofanov, J. L. P. Vizcaino, & C. H. Tan (Eds.), Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz (Vol. 10729). Article 1072909 SPIE. https://doi.org/10.1117/12.2320715

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title = "Engineering semiconductor nanowires for photodetection: From visible to terahertz",

abstract = "III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.",

keywords = "III-V, Nanowire, photoresponse, semiconductor, terahertz",

author = "Joyce, {Hannah J.} and Jack Alexander-Webber and Kun Peng and Johnston, {Michael B.} and Patrick Parkinson and Tan, {H. Hoe} and C. Jagadish",

year = "2018",

month = sep,

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doi = "10.1117/12.2320715",

language = "English",

volume = "10729",

editor = "Manijeh Razeghi and Oleg Mitrofanov and Vizcaino, {Jose Luis Pau} and Tan, {Chee Hing}",

booktitle = "Optical Sensing, Imaging, and Photon Counting",

publisher = "SPIE",

address = "United States",

note = "Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 ; Conference date: 22-08-2018 Through 23-08-2018",

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Joyce, HJ, Alexander-Webber, J, Peng, K, Johnston, MB, Parkinson, P, Tan, HH & Jagadish, C 2018, Engineering semiconductor nanowires for photodetection: From visible to terahertz. in M Razeghi, O Mitrofanov, JLP Vizcaino & CH Tan (eds), Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz. vol. 10729, 1072909, SPIE, Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018, San Diego, United States, 22/08/18. https://doi.org/10.1117/12.2320715

Engineering semiconductor nanowires for photodetection: From visible to terahertz. / Joyce, Hannah J.; Alexander-Webber, Jack; Peng, Kun et al.
Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz. ed. / Manijeh Razeghi; Oleg Mitrofanov; Jose Luis Pau Vizcaino; Chee Hing Tan. Vol. 10729 SPIE, 2018. 1072909.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Engineering semiconductor nanowires for photodetection

T2 - Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018

AU - Joyce, Hannah J.

AU - Alexander-Webber, Jack

AU - Peng, Kun

AU - Johnston, Michael B.

AU - Parkinson, Patrick

AU - Tan, H. Hoe

AU - Jagadish, C.

PY - 2018/9/18

Y1 - 2018/9/18

N2 - III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.

AB - III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.

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KW - Nanowire

KW - photoresponse

KW - semiconductor

KW - terahertz

U2 - 10.1117/12.2320715

DO - 10.1117/12.2320715

M3 - Conference contribution

AN - SCOPUS:85055335360

VL - 10729

BT - Optical Sensing, Imaging, and Photon Counting

A2 - Razeghi, Manijeh

A2 - Mitrofanov, Oleg

A2 - Vizcaino, Jose Luis Pau

A2 - Tan, Chee Hing

PB - SPIE

Y2 - 22 August 2018 through 23 August 2018

ER -

Engineering semiconductor nanowires for photodetection: From visible to terahertz

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Conference

Keywords

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