Abstract
III-V semiconductor nanowires combine the properties of III-V materials with the unique advantages of the nanowire geometry, allowing efficient room temperature photodetection across a wide range of photon energies, from a few eV down to meV. For example, due to their nanoscale size, these show great promise as sub-wavelength terahertz (THz) detectors for near-field imaging or detecting elements within a highly integrated on-chip THz spectrometer. We discuss recent advances in engineering a number of sensitive photonic devices based on III-V nanowires, including InAs nanowires with tunable photoresponse, THz polarisers and THz detectors.
Original language | English |
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Title of host publication | Optical Sensing, Imaging, and Photon Counting |
Subtitle of host publication | From X-Rays to THz |
Editors | Manijeh Razeghi, Oleg Mitrofanov, Jose Luis Pau Vizcaino, Chee Hing Tan |
Publisher | SPIE |
Volume | 10729 |
ISBN (Electronic) | 9781510620292 |
DOIs | |
Publication status | Published - 18 Sept 2018 |
Event | Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 - San Diego, United States Duration: 22 Aug 2018 → 23 Aug 2018 |
Conference
Conference | Optical Sensing, Imaging, and Photon Counting: From X-Rays to THz 2018 |
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Country/Territory | United States |
City | San Diego |
Period | 22/08/18 → 23/08/18 |
Keywords
- III-V
- Nanowire
- photoresponse
- semiconductor
- terahertz