Abstract
Conductive Pt-added LaNiO3 (PLNO) electrode films were prepared on Si substrates using radio frequency magnetron sputtering. The PLNO films demonstrate a reduced resistivity as compared with LaNiO3, which is consistent with X-ray photoelectron spectroscopy analysis. Preferred (001)-orientated texture is observed for the PLNO and BaTiO3 (BTO) films with Pt up to 36 at%. Grain size and BTO/PLNO interfacial characterization are also strongly dependent on the Pt contents. Cross-sectional high-resolution transmission electron microscopy reveals formation of an additional amorphous layer at the BTO/PLNO interface due to high Pt contents in the PLNO. It is found that the BTO film grown on PLNO with 36 at% Pt exhibits an increased remnant polarization, 5.63 mu C cm(-2) as compared with LaNiO3, 2.50 mu C cm(-2), while BTO grown on PLNO with 83 at% Pt shows a linear ferroelectric property. Strain dependence of the ferroelectric properties is also discussed. The present work demonstrates that optimizing the structure and conductivity of the bottom electrode can enhance the polarization of ferroelectric films, which may provide guidance for designing high-performance ferroelectric devices in future.
Original language | English |
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Pages (from-to) | 6280-6285 |
Number of pages | 6 |
Journal | Journal of Materials Chemistry |
Volume | 21 |
Issue number | 17 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- METAL-INSULATOR-TRANSITION
- TITANATE THIN-FILMS
- DIELECTRIC-PROPERTIES
- DEAD-LAYER
- ELECTRICAL-PROPERTIES
- CRITICAL THICKNESS
- LANIO3 ELECTRODE
- BUFFER LAYERS
- GRAIN-SIZE
- CAPACITORS