Abstract
Intersubband absorption is measured in the conduction band of GaAs and stepped GaAs/InxGa1-xAs multiple-quantum-wells confined by narrow AlAs barriers. Enhanced absorption from n = 1 to n = 2 is observed in the stepped wells. This is attributed to relaxation of the intersubband polarisation selection rule.
Original language | English |
---|---|
Pages (from-to) | 529-530 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 38 |
Issue number | 11 |
DOIs | |
Publication status | Published - 23 May 2002 |