Enhanced stability of poly(3-hexylthiophene) transistors with optimally cured poly(methyl methacrylate) dielectric layers

S. W. Lin; Y. M. Sun; A. M. Song

doi:10.1016/j.synthmet.2010.09.022

Enhanced stability of poly(3-hexylthiophene) transistors with optimally cured poly(methyl methacrylate) dielectric layers

S. W. Lin, Y. M. Sun, A. M. Song

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Abstract

Poly(3-hexylthiophene)-based organic field-effect transistors (OFETs) have been fabricated on poly(methyl methacrylate) (PMMA) gate dielectric layers under different process conditions, resulting in very different device stability in ambient air. The dielectric layers were prepared by spin coating and subsequently curing at various temperatures (120, 150, and 180 °C) or by ultraviolet light (UV) exposure. With respect to the variations of the on/off current ratio and the threshold voltage, dramatically enhanced stability of the OFETs with the PMMA layer cured at 150 °C has been demonstrated when compared to those cured at different temperatures. The devices cured by UV exposure showed even more superior stability, with reliable performance in ambient air for more than 10 days. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed. © 2010 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	2430-2434
Number of pages	4
Journal	Synthetic Metals
Volume	160
Issue number	23-24
DOIs	https://doi.org/10.1016/j.synthmet.2010.09.022
Publication status	Published - Dec 2010

Keywords

Air stability
Dielectrics
Organic field-effect transistors
Polymers

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title = "Enhanced stability of poly(3-hexylthiophene) transistors with optimally cured poly(methyl methacrylate) dielectric layers",

abstract = "Poly(3-hexylthiophene)-based organic field-effect transistors (OFETs) have been fabricated on poly(methyl methacrylate) (PMMA) gate dielectric layers under different process conditions, resulting in very different device stability in ambient air. The dielectric layers were prepared by spin coating and subsequently curing at various temperatures (120, 150, and 180 °C) or by ultraviolet light (UV) exposure. With respect to the variations of the on/off current ratio and the threshold voltage, dramatically enhanced stability of the OFETs with the PMMA layer cured at 150 °C has been demonstrated when compared to those cured at different temperatures. The devices cured by UV exposure showed even more superior stability, with reliable performance in ambient air for more than 10 days. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed. {\textcopyright} 2010 Elsevier B.V. All rights reserved.",

keywords = "Air stability, Dielectrics, Organic field-effect transistors, Polymers",

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month = dec,

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language = "English",

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T1 - Enhanced stability of poly(3-hexylthiophene) transistors with optimally cured poly(methyl methacrylate) dielectric layers

AU - Lin, S. W.

AU - Sun, Y. M.

AU - Song, A. M.

PY - 2010/12

Y1 - 2010/12

N2 - Poly(3-hexylthiophene)-based organic field-effect transistors (OFETs) have been fabricated on poly(methyl methacrylate) (PMMA) gate dielectric layers under different process conditions, resulting in very different device stability in ambient air. The dielectric layers were prepared by spin coating and subsequently curing at various temperatures (120, 150, and 180 °C) or by ultraviolet light (UV) exposure. With respect to the variations of the on/off current ratio and the threshold voltage, dramatically enhanced stability of the OFETs with the PMMA layer cured at 150 °C has been demonstrated when compared to those cured at different temperatures. The devices cured by UV exposure showed even more superior stability, with reliable performance in ambient air for more than 10 days. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed. © 2010 Elsevier B.V. All rights reserved.

AB - Poly(3-hexylthiophene)-based organic field-effect transistors (OFETs) have been fabricated on poly(methyl methacrylate) (PMMA) gate dielectric layers under different process conditions, resulting in very different device stability in ambient air. The dielectric layers were prepared by spin coating and subsequently curing at various temperatures (120, 150, and 180 °C) or by ultraviolet light (UV) exposure. With respect to the variations of the on/off current ratio and the threshold voltage, dramatically enhanced stability of the OFETs with the PMMA layer cured at 150 °C has been demonstrated when compared to those cured at different temperatures. The devices cured by UV exposure showed even more superior stability, with reliable performance in ambient air for more than 10 days. The differences in the film surface morphology were analyzed and possible mechanisms for the enhanced stability are discussed. © 2010 Elsevier B.V. All rights reserved.

KW - Air stability

KW - Dielectrics

KW - Organic field-effect transistors

KW - Polymers

U2 - 10.1016/j.synthmet.2010.09.022

DO - 10.1016/j.synthmet.2010.09.022

M3 - Article

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JF - Synthetic Metals

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ER -

Enhanced stability of poly(3-hexylthiophene) transistors with optimally cured poly(methyl methacrylate) dielectric layers

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