Enhanced Terahertz detection in self-switching diodes

I. Iniguez-de-la-Torre; J. Mateos; D. Pardo; A. M. Song; T. Gonzá lez

doi:10.1002/jnm.731

Enhanced Terahertz detection in self-switching diodes

I. Iniguez-de-la-Torre, J. Mateos, D. Pardo, A. M. Song, T. Gonzá lez

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode. Copyright © 2009 John Wiley & Sons, Ltd.

Original language	English
Title of host publication	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields\|Int J Numer Modell Electron Networks Devices Fields
Publisher	John Wiley & Sons Ltd
Pages	301-314
Number of pages	13
Volume	23
DOIs	https://doi.org/10.1002/jnm.731
Publication status	Published - Jul 2010
Event	7th Spanish Conference on Electron Devices - Univ Santiago de Compostelea, Santiago de Compostela, SPAIN Duration: 11 Feb 2009 → 13 Feb 2009 http://www3.interscience.wiley.com/cgi-bin/fulltext/122677713/PDFSTART

Conference

Conference	7th Spanish Conference on Electron Devices
City	Univ Santiago de Compostelea, Santiago de Compostela, SPAIN
Period	11/02/09 → 13/02/09
Internet address	http://www3.interscience.wiley.com/cgi-bin/fulltext/122677713/PDFSTART

Keywords

Monte Carlo simulation of nanodevices
Terahertz detectors

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10.1002/jnm.731

Cite this

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title = "Enhanced Terahertz detection in self-switching diodes",

abstract = "In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode. Copyright {\textcopyright} 2009 John Wiley & Sons, Ltd.",

keywords = "Monte Carlo simulation of nanodevices, Terahertz detectors",

author = "I. Iniguez-de-la-Torre and J. Mateos and D. Pardo and Song, {A. M.} and {Gonz{\'a} lez}, T.",

year = "2010",

month = jul,

doi = "10.1002/jnm.731",

language = "English",

volume = "23",

pages = "301--314",

booktitle = "International Journal of Numerical Modelling: Electronic Networks, Devices and Fields|Int J Numer Modell Electron Networks Devices Fields",

publisher = "John Wiley & Sons Ltd",

address = "United Kingdom",

note = "7th Spanish Conference on Electron Devices ; Conference date: 11-02-2009 Through 13-02-2009",

url = "http://www3.interscience.wiley.com/cgi-bin/fulltext/122677713/PDFSTART",

}

Iniguez-de-la-Torre, I, Mateos, J, Pardo, D, Song, AM & Gonzá lez, T 2010, Enhanced Terahertz detection in self-switching diodes. in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields|Int J Numer Modell Electron Networks Devices Fields. vol. 23, John Wiley & Sons Ltd, pp. 301-314, 7th Spanish Conference on Electron Devices, Univ Santiago de Compostelea, Santiago de Compostela, SPAIN, 11/02/09. https://doi.org/10.1002/jnm.731

Enhanced Terahertz detection in self-switching diodes. / Iniguez-de-la-Torre, I.; Mateos, J.; Pardo, D. et al.
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields|Int J Numer Modell Electron Networks Devices Fields. Vol. 23 John Wiley & Sons Ltd, 2010. p. 301-314.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhanced Terahertz detection in self-switching diodes

AU - Iniguez-de-la-Torre, I.

AU - Mateos, J.

AU - Pardo, D.

AU - Song, A. M.

AU - Gonzá lez, T.

PY - 2010/7

Y1 - 2010/7

N2 - In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode. Copyright © 2009 John Wiley & Sons, Ltd.

AB - In this work, by means of Monte Carlo simulations, we analyze the presence of a resonance in the DC current response of an asymmetric nonlinear nanodiode (called self-switching diode) to AC voltage excitations in the Terahertz range. The phenomenon, which takes place at room temperature, can be enhanced and tuned by the geometry of the device, being potentially useful for selective Terahertz detection. The resonance is linked to a noise mechanism: collective charge fluctuations in the space-charge region around the active channel of the device, which are visible both in noise and rectification. The enhancement of the DC current is attributed to the phase shift between the applied signal and the response of the charge around the channel near the vertical trenches, which controls the electron flow through the diode. Copyright © 2009 John Wiley & Sons, Ltd.

KW - Monte Carlo simulation of nanodevices

KW - Terahertz detectors

U2 - 10.1002/jnm.731

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M3 - Conference contribution

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EP - 314

BT - International Journal of Numerical Modelling: Electronic Networks, Devices and Fields|Int J Numer Modell Electron Networks Devices Fields

PB - John Wiley & Sons Ltd

T2 - 7th Spanish Conference on Electron Devices

Y2 - 11 February 2009 through 13 February 2009

ER -

Enhanced Terahertz detection in self-switching diodes

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