Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Lei  Ge; Qiu  Chen; Shuai Wang; Wenxiang Mu; Qian Xin; Zhitai Jia; Mingsheng Xu; Xutang Tao; Aimin Song

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Lei Ge, Qiu Chen, Shuai Wang, Wenxiang Mu, Qian Xin, Zhitai Jia, Mingsheng Xu, Xutang Tao, Aimin Song

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.

Original language	English
Journal	Crystals
Publication status	Accepted/In press - 23 May 2022

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title = "Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer",

abstract = "β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.",

author = "Lei Ge and Qiu Chen and Shuai Wang and Wenxiang Mu and Qian Xin and Zhitai Jia and Mingsheng Xu and Xutang Tao and Aimin Song",

year = "2022",

month = may,

day = "23",

language = "English",

journal = "Crystals",

issn = "2073-4352",

publisher = "MDPI",

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TY - JOUR

T1 - Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

AU - Ge, Lei

AU - Chen, Qiu

AU - Wang, Shuai

AU - Mu, Wenxiang

AU - Xin, Qian

AU - Jia, Zhitai

AU - Xu, Mingsheng

AU - Tao, Xutang

AU - Song, Aimin

PY - 2022/5/23

Y1 - 2022/5/23

N2 - β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.

AB - β−Ga2O3 field−effect transistors (FETs) were fabricated with and without local thinning to change the threshold voltage. A 220 nm Ga2O3 layer was mechanically exfoliated from a Cr−doped gallium oxide single crystal. Approximately 45 nm Ga2O3 was etched by inductively coupled plasma to form the local thinning. The threshold voltage of the device with etched local thinning increased from −3 V to +7 V compared to the unetched device. The effect of the local thinning was analyzed by device simulation, confirming that the local thinning structure is an effective method to enable enhancement−mode Ga2O3 FETs.

M3 - Article

SN - 2073-4352

JO - Crystals

JF - Crystals

ER -

Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer

Abstract

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